SI4874BDY MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Si4874BDY Vishay Siliconix N-Channel 30-V MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Available 0.007 at VGS = 10 V 16 TrenchFET Power MOSFETs 30 0.0085 at VGS = 4.5 V 14 100 % Rg Tested D SO-8 S D 1 8 S D 2 7 S D 3 6 G G D 4 5 Top View S Ordering Information Si4874BDY-T1-E3 (Lead (Pb)-fr

Si4874DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.0075 @ VGS = 10 V "15 30 30 0.010 @ VGS = 4.5 V "13 D D D D SO-8 SD 1 8 SD 2 7 G SD 3 6 GD N-Channel MOSFET 4 5 Top View S S S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V

Si4876DY Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Available 0.005 at VGS = 4.5 V 21 TrenchFET Power MOSFET 20 0.0075 at VGS = 2.5 V 17 100 % Rg Tested D SO-8 S D 1 8 G S D 2 7 S D 3 6 G D 4 5 Top View S Ordering Information Si4876DY-T1-E3 (Lead (Pb)-

Si4872DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.0075 @ VGS = 10 V 15 30 30 0.010 @ VGS = 4.5 V 13 D D D D SO-8 SD 1 8 SD 2 7 G SD 3 6 GD N-Channel MOSFET 4 5 Top View S S S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Unit Drain-Source Volt