All MOSFET. SI4874BDY Datasheet

 

SI4874BDY MOSFET. Datasheet pdf. Equivalent


   Type Designator: SI4874BDY
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 21 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 585 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: SO-8

 SI4874BDY Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI4874BDY Datasheet (PDF)

 ..1. Size:226K  vishay
si4874bdy.pdf

SI4874BDY
SI4874BDY

Si4874BDYVishay SiliconixN-Channel 30-V MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.007 at VGS = 10 V 16 TrenchFET Power MOSFETs300.0085 at VGS = 4.5 V 14 100 % Rg Tested DSO-8S D1 8SD2 7S D3 6 GGD4 5Top ViewSOrdering Information: Si4874BDY-T1-E3 (Lead (Pb)-fr

 8.1. Size:81K  vishay
si4874dy.pdf

SI4874BDY
SI4874BDY

Si4874DYNew ProductVishay SiliconixN-Channel Reduced Qg, Fast Switching MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.0075 @ VGS = 10 V "1530300.010 @ VGS = 4.5 V "13D D D DSO-8SD1 8SD2 7GSD3 6GD N-Channel MOSFET4 5Top ViewS S SABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDrain-Source Voltage VDS 30V

 9.1. Size:220K  vishay
si4876dy.pdf

SI4874BDY
SI4874BDY

Si4876DYVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.005 at VGS = 4.5 V 21 TrenchFET Power MOSFET200.0075 at VGS = 2.5 V 17 100 % Rg TestedDSO-8S D1 8GS D2 7S D3 6G D4 5Top ViewSOrdering Information: Si4876DY-T1-E3 (Lead (Pb)-

 9.2. Size:64K  vishay
si4872dy.pdf

SI4874BDY
SI4874BDY

Si4872DYNew ProductVishay SiliconixN-Channel Reduced Qg, Fast Switching MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.0075 @ VGS = 10 V 1530300.010 @ VGS = 4.5 V 13D D D DSO-8SD1 8SD2 7GSD3 6GD N-Channel MOSFET4 5Top ViewS S SABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol 10 secs Steady State UnitDrain-Source Volt

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