SI4888DY MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Si4888DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Available 0.007 at VGS = 10 V 16 TrenchFET Power MOSFET 30 0.010 at VGS = 4.5 V 13 High-Efficiency PWM Optimized 100 % Rg Tested SO-8 D S D 1 8 S 2 7 D S 3 6 D G G 4 5 D Top View S

Si4884BDY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.0090 at VGS = 10 V 16.5 TrenchFET Power MOSFETs 30 10.5 nC PWM Optimized 0.012 at VGS = 4.5 V 13.2 SO-8 D SD 1 8 SD 2 7 SD 3 6 G GD 4 5 Top View S Ordering Information Si

Si4886DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.010 at VGS = 10 V 13 TrenchFET Power MOSFETs 30 0.0135 at VGS = 4.5 V 11 High-Efficiency PWM Optimized Compliant to RoHS Directive 2002/95/EC SO-8 D S D 1 8 S D 2 7 S D 3

Si4884DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.0105 @ VGS = 10 V 12 30 30 0.0165 @ VGS = 4.5 V 10 D D D D SO-8 SD 1 8 S D 2 7 G SD 3 6 G D N-Channel MOSFET 4 5 Top View Ordering Information Si4884DY Si4884DY-T1 (with Tape and Reel) S S S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Param

Si4882DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.0105 @ VGS = 10 V "11 30 30 0.0205 @ VGS = 4.5 V "8 D D D D SO-8 SD 1 8 SD 2 7 G SD 3 6 GD N-Channel MOSFET 4 5 Top View S S S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V

Si4880DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.0085 at VGS = 10 V 13 TrenchFET Power MOSFETS 30 0.014 at VGS = 4.5 V 10 High-Efficiency PWM Optimized Compliant to RoHS Directive 2002/95/EC D SO-8 SD 1 8 S D 2 7 S