All MOSFET. SI4888DY Datasheet

 

SI4888DY MOSFET. Datasheet pdf. Equivalent


   Type Designator: SI4888DY
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.6 V
   |Id|ⓘ - Maximum Drain Current: 11 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 16.3 nC
   trⓘ - Rise Time: 10 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: SO-8

 SI4888DY Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI4888DY Datasheet (PDF)

 ..1. Size:224K  vishay
 si4888dy.pdf

SI4888DY SI4888DY

Si4888DYVishay SiliconixN-Channel Reduced Qg, Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.007 at VGS = 10 V 16 TrenchFET Power MOSFET300.010 at VGS = 4.5 V 13 High-Efficiency PWM Optimized 100 % Rg Tested SO-8DS D1 8S2 7 DS 3 6 DGG4 5 DTop ViewS

 9.1. Size:254K  vishay
 si4884bdy.pdf

SI4888DY SI4888DY

Si4884BDYVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.0090 at VGS = 10 V 16.5 TrenchFET Power MOSFETs30 10.5 nC PWM Optimized0.012 at VGS = 4.5 V 13.2SO-8 DSD1 8 SD2 7 SD3 6 GGD4 5 Top View SOrdering Information: Si

 9.2. Size:590K  vishay
 si4886dy.pdf

SI4888DY SI4888DY

Si4886DYVishay SiliconixN-Channel Reduced Qg, Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.010 at VGS = 10 V 13 TrenchFET Power MOSFETs300.0135 at VGS = 4.5 V 11 High-Efficiency PWM Optimized Compliant to RoHS Directive 2002/95/ECSO-8DSD1 8S D2 7S D3

 9.3. Size:69K  vishay
 si4884dy.pdf

SI4888DY SI4888DY

Si4884DYVishay SiliconixN-Channel Reduced Qg, Fast Switching MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.0105 @ VGS = 10 V 1230300.0165 @ VGS = 4.5 V 10D D D DSO-8SD1 8S D2 7GSD3 6G D N-Channel MOSFET4 5Top ViewOrdering Information: Si4884DYSi4884DY-T1 (with Tape and Reel)S S SABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Param

 9.4. Size:65K  vishay
 si4882dy.pdf

SI4888DY SI4888DY

Si4882DYNew ProductVishay SiliconixN-Channel Reduced Qg, Fast Switching MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.0105 @ VGS = 10 V "1130300.0205 @ VGS = 4.5 V "8D D D DSO-8SD1 8SD2 7GSD3 6GD N-Channel MOSFET4 5Top ViewS S SABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDrain-Source Voltage VDS 30V

 9.5. Size:243K  vishay
 si4880dy.pdf

SI4888DY SI4888DY

Si4880DYVishay SiliconixN-Channel Reduced Qg, Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.0085 at VGS = 10 V 13 TrenchFET Power MOSFETS300.014 at VGS = 4.5 V 10 High-Efficiency PWM Optimized Compliant to RoHS Directive 2002/95/ECDSO-8SD1 8S D2 7S

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