SI4890BDY MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SI4890BDY
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 10.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.6 V
   Qgⓘ - Carga de la puerta: 16 nC
   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 255 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm
   Paquete / Cubierta: SO-8

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SI4890BDY Datasheet (PDF)

..1. Size:88K vishay
si4890bd si4890bdy.pdf

Si4890BDYVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.012 at VGS = 10 V 16 TrenchFET Power MOSFET30 10 nC 100 % Rg and UIS Tested0.016 at VGS = 4.5 V 14APPLICATIONS Notebook- System Power- Adapter SwitchSO-8 DC/DCDSD

0.1. Size:866K cn vbsemi
si4890bdy-t1.pdf

SI4890BDY-T1www.VBsemi.twN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side Switch

8.1. Size:237K vishay
si4890dy.pdf

Si4890DYVishay SiliconixN-Channel Reduced Qg, Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.012 at VGS = 10 V 11 TrenchFET Power MOSFETs300.020 at VGS = 4.5 V 9 High-Efficiency PWM Optimized Compliant to RoHS Directive 2002/95/ECSO-8DS D1 8S D2 7S D

9.1. Size:244K vishay
si4896dy.pdf

Si4896DYVishay SiliconixN-Channel 80-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.0165 at VGS = 10 V 9.5 TrenchFET Power MOSFETs800.022 at VGS = 6.0 V 8.3 Compliant to RoHS Directive 2002/95/ECDSO-8S D1 8S D2 7GS D3 6G D4 5Top ViewSOrdering Information:

9.2. Size:227K vishay
si4892dy.pdf

Si4892DYVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.012 at VGS = 10 V 12.4 TrenchFET Power MOSFETs300.020 at VGS = 4.5 V 9.6 High Efficiency PWM Optimized 100 % Rg Tested 100 % UIS TestedDSO-8SD1 8S D2 7GS D3 6N-Channel

9.3. Size:226K vishay
si4894bdy.pdf

Si4894BDYVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.011 at VGS = 10 V 12 TrenchFET Power MOSFET300.016 at VGS = 4.5 V 9.8 100 % Rg Tested DSO-8S D1 8S 2 7 DGS 3 6 D4 5G DTop ViewSOrdering Information:Si4894BDY-T1-E3 (Lead (Pb)

9.4. Size:105K vishay
si4894dy.pdf

Si4894DYVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)D Lead (Pb)-Free Version is RoHS CompliantPb-free0.012 @ VGS = 10 V 12.53030Available0.018 @ VGS = 4.5 V 10.2DSO-8SD1 8SD2 7GSD3 6GD4 5STop ViewN-Channel MOSFETOrdering Information: Si4894DY-T1Si4894DY-T1E3 (Lea

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