SI4890BDY
MOSFET. Datasheet pdf. Equivalent
Type Designator: SI4890BDY
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.6
V
|Id|ⓘ - Maximum Drain Current: 10.7
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 16
nC
trⓘ - Rise Time: 10
nS
Cossⓘ -
Output Capacitance: 255
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012
Ohm
Package:
SO-8
SI4890BDY
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SI4890BDY
Datasheet (PDF)
..1. Size:88K vishay
si4890bd si4890bdy.pdf 
Si4890BDYVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.012 at VGS = 10 V 16 TrenchFET Power MOSFET30 10 nC 100 % Rg and UIS Tested0.016 at VGS = 4.5 V 14APPLICATIONS Notebook- System Power- Adapter SwitchSO-8 DC/DCDSD
0.1. Size:866K cn vbsemi
si4890bdy-t1.pdf
SI4890BDY-T1www.VBsemi.twN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side Switch
8.1. Size:237K vishay
si4890dy.pdf
Si4890DYVishay SiliconixN-Channel Reduced Qg, Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.012 at VGS = 10 V 11 TrenchFET Power MOSFETs300.020 at VGS = 4.5 V 9 High-Efficiency PWM Optimized Compliant to RoHS Directive 2002/95/ECSO-8DS D1 8S D2 7S D
9.1. Size:244K vishay
si4896dy.pdf
Si4896DYVishay SiliconixN-Channel 80-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.0165 at VGS = 10 V 9.5 TrenchFET Power MOSFETs800.022 at VGS = 6.0 V 8.3 Compliant to RoHS Directive 2002/95/ECDSO-8S D1 8S D2 7GS D3 6G D4 5Top ViewSOrdering Information:
9.2. Size:227K vishay
si4892dy.pdf
Si4892DYVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.012 at VGS = 10 V 12.4 TrenchFET Power MOSFETs300.020 at VGS = 4.5 V 9.6 High Efficiency PWM Optimized 100 % Rg Tested 100 % UIS TestedDSO-8SD1 8S D2 7GS D3 6N-Channel
9.3. Size:226K vishay
si4894bdy.pdf
Si4894BDYVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.011 at VGS = 10 V 12 TrenchFET Power MOSFET300.016 at VGS = 4.5 V 9.8 100 % Rg Tested DSO-8S D1 8S 2 7 DGS 3 6 D4 5G DTop ViewSOrdering Information:Si4894BDY-T1-E3 (Lead (Pb)
9.4. Size:105K vishay
si4894dy.pdf
Si4894DYVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)D Lead (Pb)-Free Version is RoHS CompliantPb-free0.012 @ VGS = 10 V 12.53030Available0.018 @ VGS = 4.5 V 10.2DSO-8SD1 8SD2 7GSD3 6GD4 5STop ViewN-Channel MOSFETOrdering Information: Si4894DY-T1Si4894DY-T1E3 (Lea
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