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SI4948BEY MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SI4948BEY
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.4 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 2.4 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 15 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.12 Ohm
   Paquete / Cubierta: SO-8

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SI4948BEY Datasheet (PDF)

 ..1. Size:229K  vishay
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SI4948BEY

Si4948BEY Vishay Siliconix Dual P-Channel 60-V (D-S) 175 MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.120 at VGS = - 10 V - 3.1 - 60 TrenchFET Power MOSFET 0.150 at VGS = - 4.5 V - 2.8 Compliant to RoHS Directive 2002/95/EC S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5

 0.1. Size:870K  cn vbsemi
si4948bey-t1-e3.pdf pdf_icon

SI4948BEY

SI4948BEY-T1-E3 www.VBsemi.tw Dual P-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET 0.059 at VGS = - 10 V - 5.3 100 % UIS Tested RoHS - 60 17 nC COMPLIANT 0.069 at VGS = - 4.5 V - 5.0 APPLICATIONS Load Switches S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5

 6.1. Size:226K  vishay
si4948be.pdf pdf_icon

SI4948BEY

Si4948BEY Vishay Siliconix Dual P-Channel 60-V (D-S) 175 MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.120 at VGS = - 10 V - 3.1 - 60 TrenchFET Power MOSFET 0.150 at VGS = - 4.5 V - 2.8 Compliant to RoHS Directive 2002/95/EC S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5

 8.1. Size:216K  vishay
si4948ey.pdf pdf_icon

SI4948BEY

Si4948EY Vishay Siliconix Dual P-Channel 60-V (D-S), 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.120 at VGS = - 10 V 3.1 - 60 TrenchFET Power MOSFETs 0.150 at VGS = - 4.5 V 2.8 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/EC S1 S2 SO-8 S1 1 D1

Otros transistores... SI4913DY , SI4914BDY , SI4916DY , SI4925DDY , SI4931DY , SI4936CDY , SI4943CDY , SI4946BEY , 20N50 , SI4992EY , SI5401DC , SI5402BDC , SI5402DC , SI5403DC , SI5404BDC , SI5406CDC , SI5406DC .

History: PD1503YVS-A | SI5402DC

 

 
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