All MOSFET. SI4948BEY Datasheet

 

SI4948BEY Datasheet and Replacement


   Type Designator: SI4948BEY
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2.4 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 15 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
   Package: SO-8
 

 SI4948BEY substitution

   - MOSFET ⓘ Cross-Reference Search

 

SI4948BEY Datasheet (PDF)

 ..1. Size:229K  vishay
si4948bey.pdf pdf_icon

SI4948BEY

Si4948BEYVishay SiliconixDual P-Channel 60-V (D-S) 175 MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.120 at VGS = - 10 V - 3.1- 60 TrenchFET Power MOSFET 0.150 at VGS = - 4.5 V - 2.8 Compliant to RoHS Directive 2002/95/ECS1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25

 0.1. Size:870K  cn vbsemi
si4948bey-t1-e3.pdf pdf_icon

SI4948BEY

SI4948BEY-T1-E3www.VBsemi.twDual P-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.059 at VGS = - 10 V - 5.3 100 % UIS TestedRoHS- 60 17 nCCOMPLIANT0.069 at VGS = - 4.5 V - 5.0APPLICATIONS Load SwitchesS1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25

 6.1. Size:226K  vishay
si4948be.pdf pdf_icon

SI4948BEY

Si4948BEYVishay SiliconixDual P-Channel 60-V (D-S) 175 MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.120 at VGS = - 10 V - 3.1- 60 TrenchFET Power MOSFET 0.150 at VGS = - 4.5 V - 2.8 Compliant to RoHS Directive 2002/95/ECS1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25

 8.1. Size:216K  vishay
si4948ey.pdf pdf_icon

SI4948BEY

Si4948EYVishay SiliconixDual P-Channel 60-V (D-S), 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.120 at VGS = - 10 V 3.1- 60 TrenchFET Power MOSFETs0.150 at VGS = - 4.5 V 2.8 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/ECS1 S2SO-8S1 1 D1

Datasheet: SI4913DY , SI4914BDY , SI4916DY , SI4925DDY , SI4931DY , SI4936CDY , SI4943CDY , SI4946BEY , 2N60 , SI4992EY , SI5401DC , SI5402BDC , SI5402DC , SI5403DC , SI5404BDC , SI5406CDC , SI5406DC .

History: CS4N65FA9HD

Keywords - SI4948BEY MOSFET datasheet

 SI4948BEY cross reference
 SI4948BEY equivalent finder
 SI4948BEY lookup
 SI4948BEY substitution
 SI4948BEY replacement

 

 
Back to Top

 


 
.