SI5441BDC Todos los transistores

 

SI5441BDC MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SI5441BDC
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 4.4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 50 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.045 Ohm
   Paquete / Cubierta: 1206-8

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SI5441BDC Datasheet (PDF)

 ..1. Size:223K  vishay
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SI5441BDC

Si5441BDC Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Available 0.045 at VGS = - 4.5 V - 6.1 TrenchFET Power MOSFET 0.052 at VGS = - 3.6 V - 5.7 11.5 - 20 0.080 at VGS = - 2.5 V - 4.6 1206-8 ChipFET 1 D S D D D D Marking Code D G G BK XX S Lot Traceabil

 8.1. Size:228K  vishay
si5441dc.pdf pdf_icon

SI5441BDC

Si5441DC Vishay Siliconix P-Channel 2.5 V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.055 at VGS = - 4.5 V - 5.3 TrenchFET Power MOSFET 0.06 at VGS = - 3.6 V - 5.1 11 2.5 V Rated - 20 Compliant to RoHS Directive 2002/95/EC 0.083 at VGS = - 2.5 V - 4.3 1206-8 ChipFET 1

 9.1. Size:200K  vishay
si5443dc.pdf pdf_icon

SI5441BDC

Si5443DC Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Available 0.065 at VGS = - 4.5 V 4.9 TrenchFET Power MOSFETs 2.5 V Rated 0.074 at VGS = - 3.6 V - 20 4.6 0.110 at VGS = - 2.5 V 3.8 1206 -8 ChipFET S 1 D D D D D G Marking Code D G BB XX Lot

 9.2. Size:226K  vishay
si5445bdc.pdf pdf_icon

SI5441BDC

Si5445BDC Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Available 0.033 at VGS = - 4.5 V - 7.1 TrenchFET Power MOSFET 0.043 at VGS = - 2.5 V - 6.2 14 - 8 0.060 at VGS = - 1.8 V - 5.3 1206-8 ChipFET 1 D S D D D D Marking Code D G G BM XX S Lot Traceability

Otros transistores... SI5418DU , SI5419DU , SI5424DC , SI5429DU , SI5432DC , SI5433BDC , SI5435BDC , SI5440DC , K2611 , SI5441DC , SI5442DU , SI5443DC , SI5445BDC , SI5447DC , SI5449DC , SI5456DU , SI5457DC .

History: IXFR44N80P | SI5447DC

 

 
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