All MOSFET. SI5441BDC Datasheet

 

SI5441BDC MOSFET. Datasheet pdf. Equivalent


   Type Designator: SI5441BDC
   Marking Code: BK*
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.4 V
   |Id|ⓘ - Maximum Drain Current: 4.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 6.1 nC
   trⓘ - Rise Time: 50 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: 1206-8

 SI5441BDC Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI5441BDC Datasheet (PDF)

 ..1. Size:223K  vishay
 si5441bdc.pdf

SI5441BDC SI5441BDC

Si5441BDCVishay SiliconixP-Channel 2.5-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Available0.045 at VGS = - 4.5 V - 6.1 TrenchFET Power MOSFET0.052 at VGS = - 3.6 V - 5.7 11.5- 200.080 at VGS = - 2.5 V - 4.61206-8 ChipFET1DSD DD DMarking CodeD GGBK XXSLot Traceabil

 8.1. Size:228K  vishay
 si5441dc.pdf

SI5441BDC SI5441BDC

Si5441DCVishay SiliconixP-Channel 2.5 V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.055 at VGS = - 4.5 V - 5.3 TrenchFET Power MOSFET0.06 at VGS = - 3.6 V - 5.1 11 2.5 V Rated- 20 Compliant to RoHS Directive 2002/95/EC0.083 at VGS = - 2.5 V - 4.31206-8 ChipFET1

 9.1. Size:200K  vishay
 si5443dc.pdf

SI5441BDC SI5441BDC

Si5443DCVishay SiliconixP-Channel 2.5-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.065 at VGS = - 4.5 V 4.9 TrenchFET Power MOSFETs: 2.5 V Rated0.074 at VGS = - 3.6 V - 20 4.60.110 at VGS = - 2.5 V 3.81206 -8 ChipFET S1 D D D D D GMarking CodeD G BB XX Lot

 9.2. Size:226K  vishay
 si5445bdc.pdf

SI5441BDC SI5441BDC

Si5445BDCVishay SiliconixP-Channel 1.8-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Available0.033 at VGS = - 4.5 V - 7.1 TrenchFET Power MOSFET0.043 at VGS = - 2.5 V - 6.2 14- 80.060 at VGS = - 1.8 V - 5.31206-8 ChipFET1DSD DD DMarking CodeD GGBM XXSLot Traceability

 9.3. Size:203K  vishay
 si5449dc.pdf

SI5441BDC SI5441BDC

Si5449DCVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Available0.085 at VGS = - 4.5 V - 4.3 TrenchFET Power MOSFETs: 2.5 V Rated- 300.135 at VGS = - 2.5 V - 3.41206-8 ChipFETS1 D D D D D GMarking CodeD G BH XX Lot Traceability S and Date Code

 9.4. Size:247K  vishay
 si5440dc.pdf

SI5441BDC SI5441BDC

New ProductSi5440DCVishay Siliconix N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.019 at VGS = 10 V 630 9 nCAPPLICATIONS0.024 at VGS = 4.5 V 6 Load Switches- Notebook PC1206-8 ChipFET1DDD DD DD GGSSBottom ViewN-Channel

 9.5. Size:109K  vishay
 si5445dc.pdf

SI5441BDC SI5441BDC

Si5445DCVishay SiliconixP-Channel 1.8-V (G-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) () ID (A)0.035 @ VGS = --4.5 V7.1--8 0.047 @ VGS = --2.5 V 6.20.062 @ VGS = --1.8 V 5.7S1206-8 ChipFETt1DGD DD DMarking CodeD GBC XXSLot Traceabilityand Date CodePart # CodeDBottom ViewP-Channel MOSFETOrdering Information: Si5445DC-T1ABSOLUTE MAXIM

 9.6. Size:166K  vishay
 si5442du.pdf

SI5441BDC SI5441BDC

Si5442DUVishay SiliconixN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max.ID (A)a Qg (Typ.) Thermally Enhanced PowerPAKChipFET Package0.0100 at VGS = 4.5 V 25- Small Footprint Area- Low On-Resistance0.0115 at VGS = 2.5 V 2520 16.6 nC- Thin 0.8 mm Profile0.0135 at VGS = 1.8 V 25 100% Rg Tested

 9.7. Size:203K  vishay
 si5447dc.pdf

SI5441BDC SI5441BDC

Si5447DCVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Available0.076 at VGS = - 4.5 V - 4.8 TrenchFET Power MOSFETs: 1.8 V Rated0.110 at VGS = - 2.5 V - 20 - 4.00.160 at VGS = - 1.8 V - 3.31206-8 ChipFETS1DD DD DGMarking CodeD GBG XXSLot Traceab

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: JFPC10N80C | SML80J25F

 

 
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