SI5902BDC MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Si5902DC Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.085 at VGS = 10 V 3.9 30 TrenchFET Power MOSFETs 0.143 at VGS = 4.5 V 3.0 Compliant to RoHS Directive 2002/95/EC 1206-8 ChipFET D1 D2 1 S1 D1 G1 D1 S2 G1 G2 D2 G2 Marking Code D2

Si5904DC Vishay Siliconix Dual N-Channel 2.5 V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.075 at VGS = 4.5 V 4.2 20 TrenchFET Power MOSFET 2.5 V Rated 0.134 at VGS = 2.5 V 3.1 Compliant to RoHS Directive 2002/95/EC 1206-8 ChipFET 1 D1 D2 S1 D1 G1 D1 S2 D2 G2 Marking Code

Si5905BDC Vishay Siliconix Dual P-Channel 8 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.080 at VGS = - 4.5 V - 4a TrenchFET Power MOSFETs - 8 0.117 at VGS = - 2.5 V - 4a 4 nC Compliant to RoHS Directive 2002/95/EC 0.170 at VGS = - 1.8 V - 3.5 APPLICATIONS Load Switch f

Si5903DC Vishay Siliconix Dual P-Channel 2.5 V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.155 at VGS = - 4.5 V 2.9 TrenchFET Power MOSFETs 0.180 at VGS = - 3.6 V - 20 2.7 Compliant to RoHS Directive 2002/95/EC 0.260 at VGS = - 2.5 V 2.2 1206-8 ChipFET S1 S2 1 S1 D1 G1

New Product Si5906DU Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.031 at VGS = 10 V TrenchFET Power MOSFET 6 30 8 nC New Thermally Enhanced PowerPAK 0.040 at VGS = 4.5 V 6 ChipFET Package - Small Footprint Area - Low On-Resistance -

Si5908DC Vishay Siliconix Dual N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.040 at VGS = 4.5 V 5.9 TrenchFET Power MOSFETs Ultra Low RDS(on) and Excellent Power 0.045 at VGS = 2.5 V 20 5.6 Handling in Compact Footprint 0.052 at VGS = 1.8 V 5.2 Compliant to RoHS Direct

Si5504BDC Vishay Siliconix N- and P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A) Qg (Typ) Definition 0.065 at VGS = 10 V 4a TrenchFET Power MOSFETs N-Channel 30 2 nC 0.100 at VGS = 4.5 V 4a Compliant to RoHS Directive 2002/95/EC 0.140 at VGS = - 10 V - 3.7 P-Channel - 30 2.2 nC APPLICA