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SI5902BDC Spec and Replacement


   Type Designator: SI5902BDC
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 80 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
   Package: 1206-8

 SI5902BDC Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI5902BDC Specs

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SI5902BDC

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SI5902BDC

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SI5902BDC

Si5902DC Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.085 at VGS = 10 V 3.9 30 TrenchFET Power MOSFETs 0.143 at VGS = 4.5 V 3.0 Compliant to RoHS Directive 2002/95/EC 1206-8 ChipFET D1 D2 1 S1 D1 G1 D1 S2 G1 G2 D2 G2 Marking Code D2 ... See More ⇒

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SI5902BDC

Si5904DC Vishay Siliconix Dual N-Channel 2.5 V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.075 at VGS = 4.5 V 4.2 20 TrenchFET Power MOSFET 2.5 V Rated 0.134 at VGS = 2.5 V 3.1 Compliant to RoHS Directive 2002/95/EC 1206-8 ChipFET 1 D1 D2 S1 D1 G1 D1 S2 D2 G2 Marking Code ... See More ⇒

Detailed specifications: SI5515CDC , SI5517DU , SI5853 , SI5853CDC , SI5853DDC , SI5855CDC , SI5857DU , SI5858DU , IRF630 , SI5904DC , SI5906DU , SI5908DC , SI5913DC , SI5933CDC , SI5935CDC , SI5936DU , SI5944DU .

Keywords - SI5902BDC MOSFET specs

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