SI5913DC MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SI5913DC Datasheet (PDF)

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Si5913DCVishay SiliconixP-Channel 20 V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () Qg (Typ.)ID (A)aDefinition0.084 at VGS = - 10 V - 4f LITTLE FOOT Plus Schottky Power MOSFET- 20 0.108 at VGS = - 4.5 V - 4f 4 nC Compliant to RoHS Directive 2002/95/EC0.175 at VGS = - 2.5 V - 3.5

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Si5915DCVishay SiliconixDual P-Channel 1.8 V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.070 at VGS = - 4.5 V - 4.6 TrenchFET Power MOSFET- 8 0.108 at VGS = - 2.5 V - 3.7 Low Thermal Resistance0.162 at VGS = - 1.8 V - 3.0 40 % Smaller Footprint than TSOP-6 Compliant to RoHS D

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Si5915BDCVishay SiliconixDual P-Channel 8 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.070 at VGS = - 4.5 V 4a TrenchFET Power MOSFET Low Thermal Resistance- 80.086 at VGS = - 2.5 V 4a 5 nC 40 % Smaller Footprint than TSOP-60.145 at VGS = - 1.8 V 3.6 Compliant

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