SI5913DC Datasheet. Specs and Replacement

Type Designator: SI5913DC  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 3.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 80 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.084 Ohm

Package: 1206-8

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SI5913DC datasheet

 ..1. Size:193K  vishay
 si5913dc.pdf pdf_icon

SI5913DC

Si5913DC Vishay Siliconix P-Channel 20 V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Qg (Typ.) ID (A)a Definition 0.084 at VGS = - 10 V - 4f LITTLE FOOT Plus Schottky Power MOSFET - 20 0.108 at VGS = - 4.5 V - 4f 4 nC Compliant to RoHS Directive 2002/95/EC 0.175 at VGS = - 2.5 V - 3.5 ... See More ⇒

 9.1. Size:220K  vishay
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SI5913DC

Si5915DC Vishay Siliconix Dual P-Channel 1.8 V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.070 at VGS = - 4.5 V - 4.6 TrenchFET Power MOSFET - 8 0.108 at VGS = - 2.5 V - 3.7 Low Thermal Resistance 0.162 at VGS = - 1.8 V - 3.0 40 % Smaller Footprint than TSOP-6 Compliant to RoHS D... See More ⇒

 9.2. Size:111K  vishay
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SI5913DC

Si5915BDC Vishay Siliconix Dual P-Channel 8 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.070 at VGS = - 4.5 V 4a TrenchFET Power MOSFET Low Thermal Resistance - 8 0.086 at VGS = - 2.5 V 4a 5 nC 40 % Smaller Footprint than TSOP-6 0.145 at VGS = - 1.8 V 3.6 Compliant ... See More ⇒

Detailed specifications: SI5853DDC, SI5855CDC, SI5857DU, SI5858DU, SI5902BDC, SI5904DC, SI5906DU, SI5908DC, STP75NF75, SI5933CDC, SI5935CDC, SI5936DU, SI5944DU, SI5980DU, SI5997DU, SI5999EDU, SI6404DQ

Keywords - SI5913DC MOSFET specs

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