SI5936DU Datasheet. Equivalente

 ..1. Size:151K  vishay
 si5936du.pdf

New Product Si5936DU Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A)a Qg (Typ.) Thermally Enhanced PowerPAK ChipFET Package 0.030 at VGS = 10 V 6 - Small Footprint Area 30 3.5 nC - Low On-Resistance 0.040 at VGS = 4.5 V 6 - Thin 0.8 mm Profile 100 % Rg Tested Mater

 9.1. Size:238K  vishay
 si5933cd.pdf

Si5933CDC Vishay Siliconix Dual P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.144 at VGS = - 4.5 V - 3.7 TrenchFET Power MOSFET 0.180 at VGS = - 2.5 V - 3.0 4.1 nC - 20 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC 0.222 at VGS = - 1.8 V - 3.0 APPLICATI

 9.2. Size:130K  vishay
 si5938du.pdf

Si5938DU Vishay Siliconix Dual N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.039 at VGS = 4.5 V 6 New Thermally Enhanced PowerPAK RoHS 0.045 at VGS = 2.5 V 20 6 6 nC ChipFET Package COMPLIANT - Small Footprint Area 0.055 at VGS = 1.8 V 6 - Low On-Resistance PowerPAK C

 9.3. Size:242K  vishay
 si5933cdc.pdf

Si5933CDC Vishay Siliconix Dual P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.144 at VGS = - 4.5 V - 3.7 TrenchFET Power MOSFET 0.180 at VGS = - 2.5 V - 3.0 4.1 nC - 20 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC 0.222 at VGS = - 1.8 V - 3.0 APPLICATI

 9.4. Size:239K  vishay
 si5935cdc.pdf

Si5935CDC Vishay Siliconix Dual P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.100 at VGS = - 4.5 V TrenchFET Power MOSFETs - 4g 100 % Rg Tested - 20 0.120 at VGS = - 2.5 V - 4g 6.2 nC Compliant to RoHS Directive 2002/95/EC 0.156 at VGS = - 1.8 V - 3.8 APP

 9.5. Size:235K  vishay
 si5935cd.pdf

Si5935CDC Vishay Siliconix Dual P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.100 at VGS = - 4.5 V TrenchFET Power MOSFETs - 4g 100 % Rg Tested - 20 0.120 at VGS = - 2.5 V - 4g 6.2 nC Compliant to RoHS Directive 2002/95/EC 0.156 at VGS = - 1.8 V - 3.8 APP