SI5936DU
MOSFET. Datasheet pdf. Equivalent
Type Designator: SI5936DU
Marking Code: CF*
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2.3
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2
V
|Id|ⓘ - Maximum Drain Current: 6
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 6
nC
trⓘ - Rise Time: 65
nS
Cossⓘ -
Output Capacitance: 70
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03
Ohm
Package: POWERPAK
SI5936DU
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SI5936DU
Datasheet (PDF)
..1. Size:151K vishay
si5936du.pdf
New Product Si5936DUVishay SiliconixDual N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max.ID (A)a Qg (Typ.) Thermally Enhanced PowerPAKChipFET Package0.030 at VGS = 10 V 6- Small Footprint Area30 3.5 nC- Low On-Resistance0.040 at VGS = 4.5 V 6- Thin 0.8 mm Profile 100 % Rg Tested Mater
9.1. Size:238K vishay
si5933cd.pdf
Si5933CDCVishay SiliconixDual P-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.144 at VGS = - 4.5 V - 3.7 TrenchFET Power MOSFET0.180 at VGS = - 2.5 V - 3.0 4.1 nC- 20 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC0.222 at VGS = - 1.8 V - 3.0APPLICATI
9.2. Size:130K vishay
si5938du.pdf
Si5938DUVishay SiliconixDual N-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.039 at VGS = 4.5 V 6 New Thermally Enhanced PowerPAKRoHS0.045 at VGS = 2.5 V 20 6 6 nC ChipFET PackageCOMPLIANT- Small Footprint Area0.055 at VGS = 1.8 V 6- Low On-ResistancePowerPAK C
9.3. Size:242K vishay
si5933cdc.pdf
Si5933CDCVishay SiliconixDual P-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.144 at VGS = - 4.5 V - 3.7 TrenchFET Power MOSFET0.180 at VGS = - 2.5 V - 3.0 4.1 nC- 20 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC0.222 at VGS = - 1.8 V - 3.0APPLICATI
9.4. Size:239K vishay
si5935cdc.pdf
Si5935CDCVishay SiliconixDual P-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.100 at VGS = - 4.5 V TrenchFET Power MOSFETs- 4g 100 % Rg Tested- 20 0.120 at VGS = - 2.5 V - 4g 6.2 nC Compliant to RoHS Directive 2002/95/EC0.156 at VGS = - 1.8 V - 3.8APP
9.5. Size:235K vishay
si5935cd.pdf
Si5935CDCVishay SiliconixDual P-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.100 at VGS = - 4.5 V TrenchFET Power MOSFETs- 4g 100 % Rg Tested- 20 0.120 at VGS = - 2.5 V - 4g 6.2 nC Compliant to RoHS Directive 2002/95/EC0.156 at VGS = - 1.8 V - 3.8APP
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