SI7107DN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SI7107DN
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 9.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 V
   Qgⓘ - Carga de la puerta: 44 nC
   trⓘ - Tiempo de subida: 55 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0108 Ohm
   Paquete / Cubierta: POWERPAK-1212-8

Búsqueda de reemplazo de MOSFET SI7107DN

SI7107DN Datasheet (PDF)

..1. Size:550K vishay
si7107dn.pdf

Si7107DNVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.0108 at VGS = - 4.5 V - 15.3 TrenchFET Power MOSFET: 1.8 V Rated0.015 at VGS = - 2.5 V - 20 - 13.0 Ultra Low On-Resistance for Increased 0.020 at VGS = - 1.8 V Battery Life- 11.2 New PowerPAK P

9.1. Size:547K vishay
si7100dn.pdf

Si7100DNVishay SiliconixN-Channel 8-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A)e Qg (Typ.) TrenchFET Power MOSFETRoHS0.0035 at VGS = 4.5 V 35COMPLIANT Low Thermal Resistance PowerPAK Package8 40 nC0.0045 at VGS = 2.5 V 35with Small Size and Low 1.07 mm Profile 100 % Rg TestedPowerPAK 12

9.2. Size:563K vishay
si7101dn.pdf

New ProductSi7101DNVishay SiliconixP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) 100% Rg and UIS Tested Material categorization:0.0072 at VGS = - 10 V - 35d- 30 32 nC For definitions of compliance please see0.0130 at VGS = - 4.5 V - 35dwww.vishay.com/doc?99912PowerPAK 1212-8APPL

9.3. Size:530K vishay
si7108dn.pdf

Si7108DNVishay SiliconixN-Channel 20-V (D-S) Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A) Qg (Typ.) TrenchFET Gen II Power MOSFET for RoHS0.0049 at VGS = 10 V 22COMPLIANT20 20 Ultra Low On-Resistance 0.0061 at VGS = 4.5 V 19.7 New Low Thermal Resistance PowerPAK Package withLow 1.07 mm Profil

9.4. Size:578K vishay
si7102dn.pdf

Si7102DNVishay SiliconixN-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Available0.0038 at VGS = 4.5 V 35 TrenchFET Power MOSFET12 41 nC0.0047 at VGS = 2.5 V 35 Low Thermal Resistance PowerPAK Package with Small Size and Low 1.07 mmProfile 100 % Rg TestedPo

9.5. Size:76K vishay
si7106dn.pdf

Si7106DNVishay SiliconixN-Channel 20-V (D-S) Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A) Qg (Typ.) TrenchFET Power MOSFET0.0062 at VGS = 4.5 V RoHS 19.520 17.5 nC COMPLIANT New Low Thermal Resistance PowerPAK 0.0098 at VGS = 2.5 V 15.5Package with Low 1.07 mm Profile PWM Optimized

9.6. Size:540K vishay
si7104dn.pdf

Si7104DNVishay SiliconixN-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A)e Qg (Typ.) TrenchFET Power MOSFETsRoHS0.0037 at VGS = 4.5 V 35COMPLIANT Low Thermal Resistance PowerPAK Package12 23 nC0.007 at VGS = 2.5 V 35with Small Size and Low 1.07 mm Profile 100 % Rg TestedAPPLICATI

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