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SI7107DN Spec and Replacement


   Type Designator: SI7107DN
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id| ⓘ - Maximum Drain Current: 9.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 44 nC
   tr ⓘ - Rise Time: 55 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0108 Ohm
   Package: POWERPAK-1212-8

 SI7107DN Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI7107DN Specs

 ..1. Size:550K  vishay
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SI7107DN

Si7107DN Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.0108 at VGS = - 4.5 V - 15.3 TrenchFET Power MOSFET 1.8 V Rated 0.015 at VGS = - 2.5 V - 20 - 13.0 Ultra Low On-Resistance for Increased 0.020 at VGS = - 1.8 V Battery Life - 11.2 New PowerPAK P... See More ⇒

 9.1. Size:547K  vishay
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SI7107DN

Si7100DN Vishay Siliconix N-Channel 8-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) TrenchFET Power MOSFET RoHS 0.0035 at VGS = 4.5 V 35 COMPLIANT Low Thermal Resistance PowerPAK Package 8 40 nC 0.0045 at VGS = 2.5 V 35 with Small Size and Low 1.07 mm Profile 100 % Rg Tested PowerPAK 12... See More ⇒

 9.2. Size:563K  vishay
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SI7107DN

New Product Si7101DN Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) 100% Rg and UIS Tested Material categorization 0.0072 at VGS = - 10 V - 35d - 30 32 nC For definitions of compliance please see 0.0130 at VGS = - 4.5 V - 35d www.vishay.com/doc?99912 PowerPAK 1212-8 APPL... See More ⇒

 9.3. Size:530K  vishay
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SI7107DN

Si7108DN Vishay Siliconix N-Channel 20-V (D-S) Fast Switching MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) ( )ID (A) Qg (Typ.) TrenchFET Gen II Power MOSFET for RoHS 0.0049 at VGS = 10 V 22 COMPLIANT 20 20 Ultra Low On-Resistance 0.0061 at VGS = 4.5 V 19.7 New Low Thermal Resistance PowerPAK Package with Low 1.07 mm Profil... See More ⇒

Detailed specifications: SI6968BEDQ , SI6981DQ , SI6993DQ , SI7100DN , SI7101DN , SI7102DN , SI7104DN , SI7106DN , IRF2807 , SI7108DN , SI7110DN , SI7112DN , SI7113DN , SI7114ADN , SI7114DN , SI7115DN , SI7116DN .

Keywords - SI7107DN MOSFET specs

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