SI7848BDP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SI7848BDP
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 4.2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 16 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 47 nC
   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 260 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
   Paquete / Cubierta: POWERPAK-SO-8

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SI7848BDP Datasheet (PDF)

..1. Size:474K vishay
si7848bdp.pdf

Si7848BDPVishay SiliconixN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)f Qg (Typ.)Definition0.009 at VGS = 10 V TrenchFET Power MOSFET4740 15 nC 100 % Rg and UIS Tested0.012 at VGS = 4.5 V 40 Compliant to RoHS directive 2002/95/ECPowerPAK SO-8APPLICATIONS DC/DC Con

6.1. Size:471K vishay
si7848bd.pdf

8.1. Size:97K vishay
si7848dp.pdf

Si7848DPVishay SiliconixN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSVDS (V) rDS(on) ()ID (A)Pb-free New Low Thermal Resistance 0.009 at VGS = 10 V 17AvailablePowerPAK Package with Low 1.07-mm 40RoHS*0.012 at VGS = 4.5 V 15 ProfileCOMPLIANT PWM Optimized for Fast Switching 100 % Rg TestedPowerPAK SO-8APPLI

9.1. Size:293K vishay
si7846dp.pdf

Si7846DPVishay SiliconixN-Channel 150-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.050 at VGS = 10 V 6.7150 TrenchFET Power MOSFETS New Low Thermal Resistance PowerPAKPackage with Low 1.07 mm Profile PWM Optimized for Fast Switching 100 % Rg TestedPowerPAK SO-8 APPLICA

9.2. Size:49K vishay
si7840dp.pdf

Si7840DPVishay SiliconixN-Channel 30-V (D-S) Fast Switching MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)D New Low Thermal Resistance PowerPAKrPackage with Low 1.07-mm Profile0.0095 @ VGS = 10 V 183030D 100% Rg Tested0.014 @ VGS = 4.5 V 15APPLICATIONSD DC/DC ConvertersD Optimized for High-Side SynchronousRectifier Operat

9.3. Size:502K vishay
si7842dp.pdf

Si7842DPVishay SiliconixDual N-Channel 30-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.022 at VGS = 10 V 10 LITTLE FOOT Plus Schottky300.030 at VGS = 4.5 V 8.5 New Low Thermal Resistance PowerPAKPackage with Low 1.07 mm ProfileSCHOTTKY PRODUCT SUMMARY 10

9.4. Size:466K vishay
si7840bdp.pdf

Si7840BDPVishay SiliconixN-Channel 30-V (D-S) Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Available0.0085 at VGS = 10 V 16.5 TrenchFET Power MOSFET30 140.0105 at VGS = 4.5 V New Low Thermal Resistance PowerPAK13Package with Low 1.07 mm Profile 100 % Rg Tested PowerP

9.5. Size:484K vishay
si7844dp.pdf

Si7844DPVishay SiliconixDual N-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.022 at VGS = 10 V 10 TrenchFET Power MOSFET300.030 at VGS = 4.5 V 8.5 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECPowerPAK SO-8 S1 6.15 mm 5.15 mm 1D2D1G1 2S2 3

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