SI7848BDP MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SI7848BDP
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 4.2 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 16 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 47 nC
trⓘ - Время нарастания: 12 ns
Cossⓘ - Выходная емкость: 260 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.009 Ohm
Тип корпуса: POWERPAK-SO-8
SI7848BDP Datasheet (PDF)
si7848bdp.pdf
Si7848BDPVishay SiliconixN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)f Qg (Typ.)Definition0.009 at VGS = 10 V TrenchFET Power MOSFET4740 15 nC 100 % Rg and UIS Tested0.012 at VGS = 4.5 V 40 Compliant to RoHS directive 2002/95/ECPowerPAK SO-8APPLICATIONS DC/DC Con
si7848bd.pdf
Si7848BDPVishay SiliconixN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)f Qg (Typ.)Definition0.009 at VGS = 10 V TrenchFET Power MOSFET4740 15 nC 100 % Rg and UIS Tested0.012 at VGS = 4.5 V 40 Compliant to RoHS directive 2002/95/ECPowerPAK SO-8APPLICATIONS DC/DC Con
si7848dp.pdf
Si7848DPVishay SiliconixN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSVDS (V) rDS(on) ()ID (A)Pb-free New Low Thermal Resistance 0.009 at VGS = 10 V 17AvailablePowerPAK Package with Low 1.07-mm 40RoHS*0.012 at VGS = 4.5 V 15 ProfileCOMPLIANT PWM Optimized for Fast Switching 100 % Rg TestedPowerPAK SO-8APPLI
si7846dp.pdf
Si7846DPVishay SiliconixN-Channel 150-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.050 at VGS = 10 V 6.7150 TrenchFET Power MOSFETS New Low Thermal Resistance PowerPAKPackage with Low 1.07 mm Profile PWM Optimized for Fast Switching 100 % Rg TestedPowerPAK SO-8 APPLICA
si7840dp.pdf
Si7840DPVishay SiliconixN-Channel 30-V (D-S) Fast Switching MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)D New Low Thermal Resistance PowerPAKrPackage with Low 1.07-mm Profile0.0095 @ VGS = 10 V 183030D 100% Rg Tested0.014 @ VGS = 4.5 V 15APPLICATIONSD DC/DC ConvertersD Optimized for High-Side SynchronousRectifier Operat
si7842dp.pdf
Si7842DPVishay SiliconixDual N-Channel 30-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.022 at VGS = 10 V 10 LITTLE FOOT Plus Schottky300.030 at VGS = 4.5 V 8.5 New Low Thermal Resistance PowerPAKPackage with Low 1.07 mm ProfileSCHOTTKY PRODUCT SUMMARY 10
si7840bdp.pdf
Si7840BDPVishay SiliconixN-Channel 30-V (D-S) Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Available0.0085 at VGS = 10 V 16.5 TrenchFET Power MOSFET30 140.0105 at VGS = 4.5 V New Low Thermal Resistance PowerPAK13Package with Low 1.07 mm Profile 100 % Rg Tested PowerP
si7844dp.pdf
Si7844DPVishay SiliconixDual N-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.022 at VGS = 10 V 10 TrenchFET Power MOSFET300.030 at VGS = 4.5 V 8.5 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECPowerPAK SO-8 S1 6.15 mm 5.15 mm 1D2D1G1 2S2 3
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