SI7848BDP MOSFET Datasheet: N-Ch, 40V, 16A. Full specification with pinout and replacement list

SI7848BDP Specs and Replacement

Type Designator: SI7848BDP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 4.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 260 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: POWERPAK-SO-8

SI7848BDP substitution

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SI7848BDP datasheet

..1. Size:474K vishay
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Si7848BDP Vishay Siliconix N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)f Qg (Typ.) Definition 0.009 at VGS = 10 V TrenchFET Power MOSFET 47 40 15 nC 100 % Rg and UIS Tested 0.012 at VGS = 4.5 V 40 Compliant to RoHS directive 2002/95/EC PowerPAK SO-8 APPLICATIONS DC/DC Con... See More ⇒

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8.1. Size:97K vishay
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Si7848DP Vishay Siliconix N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS VDS (V) rDS(on) ( )ID (A) Pb-free New Low Thermal Resistance 0.009 at VGS = 10 V 17 Available PowerPAK Package with Low 1.07-mm 40 RoHS* 0.012 at VGS = 4.5 V 15 Profile COMPLIANT PWM Optimized for Fast Switching 100 % Rg Tested PowerPAK SO-8 APPLI... See More ⇒

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Si7846DP Vishay Siliconix N-Channel 150-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.050 at VGS = 10 V 6.7 150 TrenchFET Power MOSFETS New Low Thermal Resistance PowerPAK Package with Low 1.07 mm Profile PWM Optimized for Fast Switching 100 % Rg Tested PowerPAK SO-8 APPLICA... See More ⇒