SI7848BDP
MOSFET. Datasheet pdf. Equivalent
Type Designator: SI7848BDP
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 4.2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 16
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 47
nC
trⓘ - Rise Time: 12
nS
Cossⓘ -
Output Capacitance: 260
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009
Ohm
Package:
POWERPAK-SO-8
SI7848BDP
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SI7848BDP
Datasheet (PDF)
..1. Size:474K vishay
si7848bdp.pdf 
Si7848BDPVishay SiliconixN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)f Qg (Typ.)Definition0.009 at VGS = 10 V TrenchFET Power MOSFET4740 15 nC 100 % Rg and UIS Tested0.012 at VGS = 4.5 V 40 Compliant to RoHS directive 2002/95/ECPowerPAK SO-8APPLICATIONS DC/DC Con
6.1. Size:471K vishay
si7848bd.pdf
Si7848BDPVishay SiliconixN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)f Qg (Typ.)Definition0.009 at VGS = 10 V TrenchFET Power MOSFET4740 15 nC 100 % Rg and UIS Tested0.012 at VGS = 4.5 V 40 Compliant to RoHS directive 2002/95/ECPowerPAK SO-8APPLICATIONS DC/DC Con
8.1. Size:97K vishay
si7848dp.pdf
Si7848DPVishay SiliconixN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSVDS (V) rDS(on) ()ID (A)Pb-free New Low Thermal Resistance 0.009 at VGS = 10 V 17AvailablePowerPAK Package with Low 1.07-mm 40RoHS*0.012 at VGS = 4.5 V 15 ProfileCOMPLIANT PWM Optimized for Fast Switching 100 % Rg TestedPowerPAK SO-8APPLI
9.1. Size:293K vishay
si7846dp.pdf
Si7846DPVishay SiliconixN-Channel 150-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.050 at VGS = 10 V 6.7150 TrenchFET Power MOSFETS New Low Thermal Resistance PowerPAKPackage with Low 1.07 mm Profile PWM Optimized for Fast Switching 100 % Rg TestedPowerPAK SO-8 APPLICA
9.2. Size:49K vishay
si7840dp.pdf
Si7840DPVishay SiliconixN-Channel 30-V (D-S) Fast Switching MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)D New Low Thermal Resistance PowerPAKrPackage with Low 1.07-mm Profile0.0095 @ VGS = 10 V 183030D 100% Rg Tested0.014 @ VGS = 4.5 V 15APPLICATIONSD DC/DC ConvertersD Optimized for High-Side SynchronousRectifier Operat
9.3. Size:502K vishay
si7842dp.pdf
Si7842DPVishay SiliconixDual N-Channel 30-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.022 at VGS = 10 V 10 LITTLE FOOT Plus Schottky300.030 at VGS = 4.5 V 8.5 New Low Thermal Resistance PowerPAKPackage with Low 1.07 mm ProfileSCHOTTKY PRODUCT SUMMARY 10
9.4. Size:466K vishay
si7840bdp.pdf
Si7840BDPVishay SiliconixN-Channel 30-V (D-S) Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Available0.0085 at VGS = 10 V 16.5 TrenchFET Power MOSFET30 140.0105 at VGS = 4.5 V New Low Thermal Resistance PowerPAK13Package with Low 1.07 mm Profile 100 % Rg Tested PowerP
9.5. Size:484K vishay
si7844dp.pdf
Si7844DPVishay SiliconixDual N-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.022 at VGS = 10 V 10 TrenchFET Power MOSFET300.030 at VGS = 4.5 V 8.5 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECPowerPAK SO-8 S1 6.15 mm 5.15 mm 1D2D1G1 2S2 3
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