SI7882DP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SI7882DP
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.9 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 12 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 13 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.4 V
   trⓘ - Tiempo de subida: 32 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0055 Ohm
   Paquete / Cubierta: POWERPAK-SO-8

Búsqueda de reemplazo de MOSFET SI7882DP

SI7882DP Datasheet (PDF)

..1. Size:456K vishay
si7882dp.pdf

Si7882DPVishay SiliconixN-Channel Reduced Qg, Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free availableVDS (V) RDS(on) ()ID (A)Available TrenchFET Power MOSFET0.0055 at VGS = 4.5 V 22RoHS* New Low Thermal Resistance PowerPAK 12COMPLIANT0.008 at VGS = 2.5 V 18 Package with Low 1.07 mm Profile PWM Optimized for High Efficiency

9.1. Size:477K vishay
si7884bd.pdf

New ProductSi7884BDPVishay SiliconixN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A)f Qg (Typ.) TrenchFET Power MOSFET0.0075 at VGS = 10 V 58 100 % Rg and UIS TestedRoHS40 21 nCCOMPLIANT0.009 at VGS = 4.5 V 53APPLICATIONSPowerPAK SO-8 Synchronous RectifierS6.15 mm 5.15 mm1S

9.2. Size:465K vishay
si7860adp si7880adp.pdf

Si7860ADPVishay SiliconixN-Channel Reduced Qg, Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.0095 at VGS = 10 V 16 TrenchFET Power MOSFET300.0125 at VGS = 4.5 V PWM Optimized for High Efficiency16 New Low Thermal Resistance PowerPAKPackage with Low 1.07 mm Profile

9.3. Size:480K vishay
si7884bdp.pdf

9.4. Size:462K vishay
si7886adp.pdf

Si7886ADPVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free availableVDS (V) RDS(on) ()ID (A) Qg (Typ.) TrenchFET Power MOSFETRoHS0.0040 at VGS = 10 V 25COMPLIANT Optimized for Low Side Synchronous 30 470.0048 at VGS = 4.5 V 23 Rectifier Operation New Low Thermal Resistance PowerPAK Package withLow 1.07

9.5. Size:77K vishay
si7884dp.pdf

Si7884DPVishay SiliconixN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free availableVDS (V) RDS(on) ()ID (A) TrenchFET Power MOSFETSRoHS0.007 at VGS = 10 V 20COMPLIANT New Low Thermal Resistance PowerPAK 400.0095 at VGS = 4.5 V 17 Package with Low 1.07 mm Profile PWM Optimized for Fast Switching 100 % Rg TestedPowerPAK

9.6. Size:297K vishay
si7880adp.pdf

Si7880ADPVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free availableVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFETRoHS0.003 at VGS = 10 V 40COMPLIANT PWM Optimized30 37 nC0.004 at VGS = 4.5 V 40 New Low Thermal Resistance PowerPAK Package withLow 1.07 mm Profile 100 % Rg TestedPowerPAK SO

9.7. Size:461K vishay
si7888dp.pdf

Si7888DPVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free availableVDS (V) RDS(on) ()ID (A) TrenchFET Power MOSFETRoHS0.012 at VGS = 10 V 15.7 New Low Thermal Resistance PowerPAK COMPLIANT 300.020 at VGS = 4.5 V 12.1 Package with Low 1.07 mm Profile Optimized for High-Side Synchronous RectifierOperation

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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