SI7882DP MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SI7882DP
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 1.9 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 12 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 1.4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 13 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 32 ns
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0055 Ohm
Тип корпуса: POWERPAK-SO-8
SI7882DP Datasheet (PDF)
si7882dp.pdf
Si7882DPVishay SiliconixN-Channel Reduced Qg, Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free availableVDS (V) RDS(on) ()ID (A)Available TrenchFET Power MOSFET0.0055 at VGS = 4.5 V 22RoHS* New Low Thermal Resistance PowerPAK 12COMPLIANT0.008 at VGS = 2.5 V 18 Package with Low 1.07 mm Profile PWM Optimized for High Efficiency
si7884bd.pdf
New ProductSi7884BDPVishay SiliconixN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A)f Qg (Typ.) TrenchFET Power MOSFET0.0075 at VGS = 10 V 58 100 % Rg and UIS TestedRoHS40 21 nCCOMPLIANT0.009 at VGS = 4.5 V 53APPLICATIONSPowerPAK SO-8 Synchronous RectifierS6.15 mm 5.15 mm1S
si7860adp si7880adp.pdf
Si7860ADPVishay SiliconixN-Channel Reduced Qg, Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.0095 at VGS = 10 V 16 TrenchFET Power MOSFET300.0125 at VGS = 4.5 V PWM Optimized for High Efficiency16 New Low Thermal Resistance PowerPAKPackage with Low 1.07 mm Profile
si7884bdp.pdf
New ProductSi7884BDPVishay SiliconixN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A)f Qg (Typ.) TrenchFET Power MOSFET0.0075 at VGS = 10 V 58 100 % Rg and UIS TestedRoHS40 21 nCCOMPLIANT0.009 at VGS = 4.5 V 53APPLICATIONSPowerPAK SO-8 Synchronous RectifierS6.15 mm 5.15 mm1S
si7886adp.pdf
Si7886ADPVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free availableVDS (V) RDS(on) ()ID (A) Qg (Typ.) TrenchFET Power MOSFETRoHS0.0040 at VGS = 10 V 25COMPLIANT Optimized for Low Side Synchronous 30 470.0048 at VGS = 4.5 V 23 Rectifier Operation New Low Thermal Resistance PowerPAK Package withLow 1.07
si7884dp.pdf
Si7884DPVishay SiliconixN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free availableVDS (V) RDS(on) ()ID (A) TrenchFET Power MOSFETSRoHS0.007 at VGS = 10 V 20COMPLIANT New Low Thermal Resistance PowerPAK 400.0095 at VGS = 4.5 V 17 Package with Low 1.07 mm Profile PWM Optimized for Fast Switching 100 % Rg TestedPowerPAK
si7880adp.pdf
Si7880ADPVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free availableVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFETRoHS0.003 at VGS = 10 V 40COMPLIANT PWM Optimized30 37 nC0.004 at VGS = 4.5 V 40 New Low Thermal Resistance PowerPAK Package withLow 1.07 mm Profile 100 % Rg TestedPowerPAK SO
si7888dp.pdf
Si7888DPVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free availableVDS (V) RDS(on) ()ID (A) TrenchFET Power MOSFETRoHS0.012 at VGS = 10 V 15.7 New Low Thermal Resistance PowerPAK COMPLIANT 300.020 at VGS = 4.5 V 12.1 Package with Low 1.07 mm Profile Optimized for High-Side Synchronous RectifierOperation
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918