SI7882DP MOSFET. Datasheet pdf. Equivalent
Type Designator: SI7882DP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.4 V
|Id|ⓘ - Maximum Drain Current: 13 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 32 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
Package: POWERPAK-SO-8
SI7882DP Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SI7882DP Datasheet (PDF)
si7882dp.pdf
Si7882DPVishay SiliconixN-Channel Reduced Qg, Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free availableVDS (V) RDS(on) ()ID (A)Available TrenchFET Power MOSFET0.0055 at VGS = 4.5 V 22RoHS* New Low Thermal Resistance PowerPAK 12COMPLIANT0.008 at VGS = 2.5 V 18 Package with Low 1.07 mm Profile PWM Optimized for High Efficiency
si7884bd.pdf
New ProductSi7884BDPVishay SiliconixN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A)f Qg (Typ.) TrenchFET Power MOSFET0.0075 at VGS = 10 V 58 100 % Rg and UIS TestedRoHS40 21 nCCOMPLIANT0.009 at VGS = 4.5 V 53APPLICATIONSPowerPAK SO-8 Synchronous RectifierS6.15 mm 5.15 mm1S
si7860adp si7880adp.pdf
Si7860ADPVishay SiliconixN-Channel Reduced Qg, Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.0095 at VGS = 10 V 16 TrenchFET Power MOSFET300.0125 at VGS = 4.5 V PWM Optimized for High Efficiency16 New Low Thermal Resistance PowerPAKPackage with Low 1.07 mm Profile
si7884bdp.pdf
New ProductSi7884BDPVishay SiliconixN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A)f Qg (Typ.) TrenchFET Power MOSFET0.0075 at VGS = 10 V 58 100 % Rg and UIS TestedRoHS40 21 nCCOMPLIANT0.009 at VGS = 4.5 V 53APPLICATIONSPowerPAK SO-8 Synchronous RectifierS6.15 mm 5.15 mm1S
si7886adp.pdf
Si7886ADPVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free availableVDS (V) RDS(on) ()ID (A) Qg (Typ.) TrenchFET Power MOSFETRoHS0.0040 at VGS = 10 V 25COMPLIANT Optimized for Low Side Synchronous 30 470.0048 at VGS = 4.5 V 23 Rectifier Operation New Low Thermal Resistance PowerPAK Package withLow 1.07
si7884dp.pdf
Si7884DPVishay SiliconixN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free availableVDS (V) RDS(on) ()ID (A) TrenchFET Power MOSFETSRoHS0.007 at VGS = 10 V 20COMPLIANT New Low Thermal Resistance PowerPAK 400.0095 at VGS = 4.5 V 17 Package with Low 1.07 mm Profile PWM Optimized for Fast Switching 100 % Rg TestedPowerPAK
si7880adp.pdf
Si7880ADPVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free availableVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFETRoHS0.003 at VGS = 10 V 40COMPLIANT PWM Optimized30 37 nC0.004 at VGS = 4.5 V 40 New Low Thermal Resistance PowerPAK Package withLow 1.07 mm Profile 100 % Rg TestedPowerPAK SO
si7888dp.pdf
Si7888DPVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free availableVDS (V) RDS(on) ()ID (A) TrenchFET Power MOSFETRoHS0.012 at VGS = 10 V 15.7 New Low Thermal Resistance PowerPAK COMPLIANT 300.020 at VGS = 4.5 V 12.1 Package with Low 1.07 mm Profile Optimized for High-Side Synchronous RectifierOperation
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