MDF13N65B Todos los transistores

 

MDF13N65B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MDF13N65B
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 36.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 14 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 81 nS
   Cossⓘ - Capacitancia de salida: 243 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.46 Ohm
   Paquete / Cubierta: TO-220F
 

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MDF13N65B Datasheet (PDF)

 ..1. Size:830K  magnachip
 mdf13n65b.pdf pdf_icon

MDF13N65B

MDF13N65B N-Channel MOSFET 650V, 14A, 0.46 General Description Features These N-channel MOSFET are produced using advanced V = 650V DSMagnaChips MOSFET Technology, which provides low on- I = 14A @ V = 10V D GSstate resistance, high switching performance and excellent R 0.46 @ V = 10V DS(ON) GSquality. Applications These devices are suitable device

 0.1. Size:811K  magnachip
 mdf13n65bth.pdf pdf_icon

MDF13N65B

MDF13N65B N-Channel MOSFET 650V, 14A, 0.46 General Description Features These N-channel MOSFET are produced using advanced V = 650V DSMagnaChips MOSFET Technology, which provides low on- I = 14A @ V = 10V D GSstate resistance, high switching performance and excellent R 0.46 @ V = 10V DS(ON) GSquality. Applications These devices are suitable device

 8.1. Size:1131K  magnachip
 mdf13n50gth mdp13n50gth.pdf pdf_icon

MDF13N65B

MDP13N50G / MDF13N50G N-Channel MOSFET 500V, 13.0A, 0.5 General Description Features VDS = 500V These N-channel MOSFET are produced using advanced VDS = 550V @ Tjmax MagnaChips MOSFET Technology, which provides low on-ID = 13.0A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON)

 8.2. Size:1209K  magnachip
 mdf13n50bth mdp13n50bth.pdf pdf_icon

MDF13N65B

MDP13N50B / MDF13N50B N-Channel MOSFET 500V, 13.0 A, 0.5General Description Features The MDP/F13N50B uses advanced Magnachips VDS = 500V MOSFET Technology, which provides low on-state ID = 13.0A @VGS = 10V resistance, high switching performance and RDS(ON) 0.5 @VGS = 10V excellent quality. MDP/F13N50B is suitable device for SMPS, HID Applications and general p

MOSTRAR MÁS

Otros transistores... SI9934BDY , SI9945BDY , JCS5N50VT , JCS5N50RT , JCS5N50CT , JCS5N50FT , JCS7N65CB , JCS7N65FB , 20N50 , AOD452A , APM2030N , CEP603AL , CEB603AL , HY1906P , HY1906B , IRFP640 , MMD70R900P .

History: BLP039N08-Q | BLP14N08L-Q | APM2301AC | 2SK1386-01 | SSM3K15TE | PZ2806HV | PMGD280UN

 

 
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