MDF13N65B MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MDF13N65B
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 36.7 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 14 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 81 nS
Cossⓘ - Capacitancia de salida: 243 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.46 Ohm
Encapsulados: TO-220F
Búsqueda de reemplazo de MDF13N65B MOSFET
- Selecciónⓘ de transistores por parámetros
MDF13N65B datasheet
mdf13n65b.pdf
MDF13N65B N-Channel MOSFET 650V, 14A, 0.46 General Description Features These N-channel MOSFET are produced using advanced V = 650V DS MagnaChip s MOSFET Technology, which provides low on- I = 14A @ V = 10V D GS state resistance, high switching performance and excellent R 0.46 @ V = 10V DS(ON) GS quality. Applications These devices are suitable device
mdf13n65bth.pdf
MDF13N65B N-Channel MOSFET 650V, 14A, 0.46 General Description Features These N-channel MOSFET are produced using advanced V = 650V DS MagnaChip s MOSFET Technology, which provides low on- I = 14A @ V = 10V D GS state resistance, high switching performance and excellent R 0.46 @ V = 10V DS(ON) GS quality. Applications These devices are suitable device
mdf13n50gth mdp13n50gth.pdf
MDP13N50G / MDF13N50G N-Channel MOSFET 500V, 13.0A, 0.5 General Description Features VDS = 500V These N-channel MOSFET are produced using advanced VDS = 550V @ Tjmax MagnaChip s MOSFET Technology, which provides low on- ID = 13.0A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON)
mdf13n50bth mdp13n50bth.pdf
MDP13N50B / MDF13N50B N-Channel MOSFET 500V, 13.0 A, 0.5 General Description Features The MDP/F13N50B uses advanced Magnachip s VDS = 500V MOSFET Technology, which provides low on-state ID = 13.0A @VGS = 10V resistance, high switching performance and RDS(ON) 0.5 @VGS = 10V excellent quality. MDP/F13N50B is suitable device for SMPS, HID Applications and general p
Otros transistores... SI9934BDY , SI9945BDY , JCS5N50VT , JCS5N50RT , JCS5N50CT , JCS5N50FT , JCS7N65CB , JCS7N65FB , STP80NF70 , AOD452A , APM2030N , CEP603AL , CEB603AL , HY1906P , HY1906B , IRFP640 , MMD70R900P .
History: AO6810 | AO6801E | FK8V0306 | KP746B
History: AO6810 | AO6801E | FK8V0306 | KP746B
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AUN084N10 | AUN065N10 | AUN063N10 | AUN062N08BG | AUN060N08AG | AUN053N10 | AUN050N08BGL | AUN045N085 | AUN042N055 | AUN036N10 | AUD069N10A | AUD062N08BG | AUD060N08AG | AUD060N055 | AUD056N08BGL | AUB062N08BG
Popular searches
m28s transistor | 2n3640 | tta1943 transistor | fb4410z | 2sa899 | 2sc1166 | jcs9n50fc datasheet | 2n2147