MDF13N65B PDF and Equivalents Search

 

MDF13N65B Specs and Replacement

Type Designator: MDF13N65B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 36.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 14 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 81 nS

Cossⓘ - Output Capacitance: 243 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.46 Ohm

Package: TO-220F

MDF13N65B substitution

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MDF13N65B datasheet

 ..1. Size:830K  magnachip
 mdf13n65b.pdf pdf_icon

MDF13N65B

MDF13N65B N-Channel MOSFET 650V, 14A, 0.46 General Description Features These N-channel MOSFET are produced using advanced V = 650V DS MagnaChip s MOSFET Technology, which provides low on- I = 14A @ V = 10V D GS state resistance, high switching performance and excellent R 0.46 @ V = 10V DS(ON) GS quality. Applications These devices are suitable device... See More ⇒

 0.1. Size:811K  magnachip
 mdf13n65bth.pdf pdf_icon

MDF13N65B

MDF13N65B N-Channel MOSFET 650V, 14A, 0.46 General Description Features These N-channel MOSFET are produced using advanced V = 650V DS MagnaChip s MOSFET Technology, which provides low on- I = 14A @ V = 10V D GS state resistance, high switching performance and excellent R 0.46 @ V = 10V DS(ON) GS quality. Applications These devices are suitable device... See More ⇒

 8.1. Size:1131K  magnachip
 mdf13n50gth mdp13n50gth.pdf pdf_icon

MDF13N65B

MDP13N50G / MDF13N50G N-Channel MOSFET 500V, 13.0A, 0.5 General Description Features VDS = 500V These N-channel MOSFET are produced using advanced VDS = 550V @ Tjmax MagnaChip s MOSFET Technology, which provides low on- ID = 13.0A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON) ... See More ⇒

 8.2. Size:1209K  magnachip
 mdf13n50bth mdp13n50bth.pdf pdf_icon

MDF13N65B

MDP13N50B / MDF13N50B N-Channel MOSFET 500V, 13.0 A, 0.5 General Description Features The MDP/F13N50B uses advanced Magnachip s VDS = 500V MOSFET Technology, which provides low on-state ID = 13.0A @VGS = 10V resistance, high switching performance and RDS(ON) 0.5 @VGS = 10V excellent quality. MDP/F13N50B is suitable device for SMPS, HID Applications and general p... See More ⇒

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Detailed specifications: SI9934BDY, SI9945BDY, JCS5N50VT, JCS5N50RT, JCS5N50CT, JCS5N50FT, JCS7N65CB, JCS7N65FB, STP80NF70, AOD452A, APM2030N, CEP603AL, CEB603AL, HY1906P, HY1906B, IRFP640, MMD70R900P

Keywords - MDF13N65B MOSFET specs

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