Справочник MOSFET. MDF13N65B

 

MDF13N65B MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: MDF13N65B
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 36.7 W
   Предельно допустимое напряжение сток-исток |Uds|: 650 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
   Максимально допустимый постоянный ток стока |Id|: 14 A
   Максимальная температура канала (Tj): 150 °C
   Время нарастания (tr): 81 ns
   Выходная емкость (Cd): 243 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.46 Ohm
   Тип корпуса: TO-220F

 Аналог (замена) для MDF13N65B

 

 

MDF13N65B Datasheet (PDF)

 ..1. Size:830K  magnachip
mdf13n65b.pdf

MDF13N65B
MDF13N65B

MDF13N65B N-Channel MOSFET 650V, 14A, 0.46 General Description Features These N-channel MOSFET are produced using advanced V = 650V DSMagnaChips MOSFET Technology, which provides low on- I = 14A @ V = 10V D GSstate resistance, high switching performance and excellent R 0.46 @ V = 10V DS(ON) GSquality. Applications These devices are suitable device

 0.1. Size:811K  magnachip
mdf13n65bth.pdf

MDF13N65B
MDF13N65B

MDF13N65B N-Channel MOSFET 650V, 14A, 0.46 General Description Features These N-channel MOSFET are produced using advanced V = 650V DSMagnaChips MOSFET Technology, which provides low on- I = 14A @ V = 10V D GSstate resistance, high switching performance and excellent R 0.46 @ V = 10V DS(ON) GSquality. Applications These devices are suitable device

 8.1. Size:1131K  magnachip
mdf13n50gth mdp13n50gth.pdf

MDF13N65B
MDF13N65B

MDP13N50G / MDF13N50G N-Channel MOSFET 500V, 13.0A, 0.5 General Description Features VDS = 500V These N-channel MOSFET are produced using advanced VDS = 550V @ Tjmax MagnaChips MOSFET Technology, which provides low on-ID = 13.0A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON)

 8.2. Size:1209K  magnachip
mdf13n50bth mdp13n50bth.pdf

MDF13N65B
MDF13N65B

MDP13N50B / MDF13N50B N-Channel MOSFET 500V, 13.0 A, 0.5General Description Features The MDP/F13N50B uses advanced Magnachips VDS = 500V MOSFET Technology, which provides low on-state ID = 13.0A @VGS = 10V resistance, high switching performance and RDS(ON) 0.5 @VGS = 10V excellent quality. MDP/F13N50B is suitable device for SMPS, HID Applications and general p

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