MDD1501RH Todos los transistores

 

MDD1501RH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MDD1501RH
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 44.6 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 67.4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 12.2 nS
   Cossⓘ - Capacitancia de salida: 261 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0056 Ohm
   Paquete / Cubierta: TO-252
 

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MDD1501RH Datasheet (PDF)

 ..1. Size:672K  magnachip
 mdd1501rh.pdf pdf_icon

MDD1501RH

MDD1501 Single N-channel Trench MOSFET 30V, 67.4A, 5.6mGeneral Description Features The MDD1501 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state I = 67.4A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON) (MAX)quality. MDD1501 is suitable device for DC to DC

 8.1. Size:661K  magnachip
 mdd1504rh.pdf pdf_icon

MDD1501RH

MDD1504 Single N-channel Trench MOSFET 30V, 31.5A, 12.7m Features General Description The MDD1504 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state I = 31.5A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON) (MAX)quality. MDD1504 is suitable device for DC to DC

 8.2. Size:661K  magnachip
 mdd1502rh.pdf pdf_icon

MDD1501RH

MDD1502 Single N-channel Trench MOSFET 30V, 45.7A, 8.5mGeneral Description Features The MDD1502 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state I = 45.7A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON) (MAX)quality. MDD1502 is suitable device for DC to DC

 8.3. Size:656K  magnachip
 mdd1503rh.pdf pdf_icon

MDD1501RH

MDD1503 Single N-channel Trench MOSFET 30V, 87.5A, 4.7m Features General Description The MDD1503 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state I = 87.5A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON) (MAX)quality. MDD1503 is suitable device for DC to DC

MOSTRAR MÁS

Otros transistores... RU190N08Q , RU190N08R , RU190N08S , MDA0531EURH , MDC0531EURH , MDCA0418EURH , MDD1051RH , MDD14N25CRH , AO3401 , MDD1502RH , MDD1503RH , MDD1504RH , MDD1752RH , MDD1754RH , MDD1851RH , MDD1901RH , MDD1902RH .

History: 2SK1206 | STF32N65M5 | IXTH90P10P

 

 
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