MDD1501RH PDF and Equivalents Search

 

MDD1501RH Specs and Replacement

Type Designator: MDD1501RH

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 44.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 67.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12.2 nS

Cossⓘ - Output Capacitance: 261 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0056 Ohm

Package: TO-252

MDD1501RH substitution

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MDD1501RH datasheet

 ..1. Size:672K  magnachip
 mdd1501rh.pdf pdf_icon

MDD1501RH

MDD1501 Single N-channel Trench MOSFET 30V, 67.4A, 5.6m General Description Features The MDD1501 uses advanced MagnaChip s MOSFET V = 30V DS Technology, which provides high performance in on-state I = 67.4A @V = 10V D GS resistance, fast switching performance and excellent R DS(ON) (MAX) quality. MDD1501 is suitable device for DC to DC ... See More ⇒

 8.1. Size:661K  magnachip
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MDD1501RH

MDD1504 Single N-channel Trench MOSFET 30V, 31.5A, 12.7m Features General Description The MDD1504 uses advanced MagnaChip s MOSFET V = 30V DS Technology, which provides high performance in on-state I = 31.5A @V = 10V D GS resistance, fast switching performance and excellent R DS(ON) (MAX) quality. MDD1504 is suitable device for DC to DC ... See More ⇒

 8.2. Size:661K  magnachip
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MDD1501RH

MDD1502 Single N-channel Trench MOSFET 30V, 45.7A, 8.5m General Description Features The MDD1502 uses advanced MagnaChip s MOSFET V = 30V DS Technology, which provides high performance in on-state I = 45.7A @V = 10V D GS resistance, fast switching performance and excellent R DS(ON) (MAX) quality. MDD1502 is suitable device for DC to DC ... See More ⇒

 8.3. Size:656K  magnachip
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MDD1501RH

MDD1503 Single N-channel Trench MOSFET 30V, 87.5A, 4.7m Features General Description The MDD1503 uses advanced MagnaChip s MOSFET V = 30V DS Technology, which provides high performance in on-state I = 87.5A @V = 10V D GS resistance, fast switching performance and excellent R DS(ON) (MAX) quality. MDD1503 is suitable device for DC to DC ... See More ⇒

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Detailed specifications: RU190N08Q, RU190N08R, RU190N08S, MDA0531EURH, MDC0531EURH, MDCA0418EURH, MDD1051RH, MDD14N25CRH, P60NF06, MDD1502RH, MDD1503RH, MDD1504RH, MDD1752RH, MDD1754RH, MDD1851RH, MDD1901RH, MDD1902RH

Keywords - MDD1501RH MOSFET specs

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