MDD1904RH Todos los transistores

 

MDD1904RH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MDD1904RH
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 35.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 10.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 3.6 nS
   Cossⓘ - Capacitancia de salida: 51 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.14 Ohm
   Paquete / Cubierta: TO-252
 

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MDD1904RH Datasheet (PDF)

 ..1. Size:992K  magnachip
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MDD1904RH

MDD1904 Single N-channel Trench MOSFET 100V, 10.8A, 140m General Description Features The MDD1904 uses advanced MagnaChips MOSFET V = 100V DSTechnology, which provides high performance in on-state I = 10.8A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON) (MAX)quality. MDD1904 is suitable device for DC to DC

 8.1. Size:881K  magnachip
mdd1902rh.pdf pdf_icon

MDD1904RH

MDD1902 Single N-channel Trench MOSFET 100V, 40A, 28m General Description Features The MDD1902 uses advanced MagnaChips MOSFET VDS = 100V Technology, which provides high performance in on-state I = 40A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON)quality. MDD1902 is suitable device for DC/DC

 8.2. Size:802K  magnachip
mdd1903rh.pdf pdf_icon

MDD1904RH

MDD1903 Single N-channel Trench MOSFET 100V, 12.8A, 105m General Description Features The MDD1903 uses advanced MagnaChips MOSFET V = 100V DSTechnology, which provides high performance in on-state I = 12.8A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON) (MAX)quality. MDD1903 is suitable device for DC to DC

 8.3. Size:841K  magnachip
mdd1901rh.pdf pdf_icon

MDD1904RH

MDD1901 Single N-channel Trench MOSFET 100V, 40A, 22m General Description Features The MDD1901 uses advanced MagnaChips MOSFET VDS = 100V Technology, which provides high performance in on-state I = 40A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON)quality. MDD1901 is suitable device for DC/DC

Otros transistores... MDD1503RH , MDD1504RH , MDD1752RH , MDD1754RH , MDD1851RH , MDD1901RH , MDD1902RH , MDD1903RH , 60N06 , MDD1951RH , MDD2N60RH , MDD3752ARH , MDD3752RH , MDD3754RH , MDD3N40RH , MDD3N50GRH , MDD4N20YRH .

History: IRLZ24N | IRFBA35N60C

 

 
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