MDD1904RH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MDD1904RH
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 35.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 10.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 3.6 nS
   Cossⓘ - Capacitancia de salida: 51 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.14 Ohm
   Paquete / Cubierta: TO-252

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MDD1904RH Datasheet (PDF)

..1. Size:992K magnachip
mdd1904rh.pdf

MDD1904 Single N-channel Trench MOSFET 100V, 10.8A, 140m General Description Features The MDD1904 uses advanced MagnaChips MOSFET V = 100V DSTechnology, which provides high performance in on-state I = 10.8A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON) (MAX)quality. MDD1904 is suitable device for DC to DC

8.1. Size:881K magnachip
mdd1902rh.pdf

MDD1902 Single N-channel Trench MOSFET 100V, 40A, 28m General Description Features The MDD1902 uses advanced MagnaChips MOSFET VDS = 100V Technology, which provides high performance in on-state I = 40A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON)quality. MDD1902 is suitable device for DC/DC

8.2. Size:802K magnachip
mdd1903rh.pdf

MDD1903 Single N-channel Trench MOSFET 100V, 12.8A, 105m General Description Features The MDD1903 uses advanced MagnaChips MOSFET V = 100V DSTechnology, which provides high performance in on-state I = 12.8A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON) (MAX)quality. MDD1903 is suitable device for DC to DC

8.3. Size:841K magnachip
mdd1901rh.pdf

MDD1901 Single N-channel Trench MOSFET 100V, 40A, 22m General Description Features The MDD1901 uses advanced MagnaChips MOSFET VDS = 100V Technology, which provides high performance in on-state I = 40A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON)quality. MDD1901 is suitable device for DC/DC

8.4. Size:818K cn vbsemi
mdd1902rh.pdf

MDD1902RHwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature0.030 at VGS = 10 V40RoHS*100 Low Thermal Resistance Package0.035 at VGS = 4.5 V37COMPLIANTDTO-252GG D STop ViewSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unle

8.5. Size:287K inchange semiconductor
mdd1903rh.pdf

isc N-Channel MOSFET Transistor MDD1903RHFEATURESDrain Current : I = 12.8A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 105m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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