MDD1904RH MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: MDD1904RH
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 35.8 W
Предельно допустимое напряжение сток-исток |Uds|: 100 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 3 V
Максимально допустимый постоянный ток стока |Id|: 10.8 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 3.6 ns
Выходная емкость (Cd): 51 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.14 Ohm
Тип корпуса: TO-252
MDD1904RH Datasheet (PDF)
mdd1904rh.pdf
MDD1904 Single N-channel Trench MOSFET 100V, 10.8A, 140m General Description Features The MDD1904 uses advanced MagnaChips MOSFET V = 100V DSTechnology, which provides high performance in on-state I = 10.8A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON) (MAX)quality. MDD1904 is suitable device for DC to DC
mdd1902rh.pdf
MDD1902 Single N-channel Trench MOSFET 100V, 40A, 28m General Description Features The MDD1902 uses advanced MagnaChips MOSFET VDS = 100V Technology, which provides high performance in on-state I = 40A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON)quality. MDD1902 is suitable device for DC/DC
mdd1903rh.pdf
MDD1903 Single N-channel Trench MOSFET 100V, 12.8A, 105m General Description Features The MDD1903 uses advanced MagnaChips MOSFET V = 100V DSTechnology, which provides high performance in on-state I = 12.8A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON) (MAX)quality. MDD1903 is suitable device for DC to DC
mdd1901rh.pdf
MDD1901 Single N-channel Trench MOSFET 100V, 40A, 22m General Description Features The MDD1901 uses advanced MagnaChips MOSFET VDS = 100V Technology, which provides high performance in on-state I = 40A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON)quality. MDD1901 is suitable device for DC/DC
mdd1902rh.pdf
MDD1902RHwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature0.030 at VGS = 10 V40RoHS*100 Low Thermal Resistance Package0.035 at VGS = 4.5 V37COMPLIANTDTO-252GG D STop ViewSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unle
mdd1903rh.pdf
isc N-Channel MOSFET Transistor MDD1903RHFEATURESDrain Current : I = 12.8A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 105m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Список транзисторов
Обновления
MOSFET: BSS123K2 | BRU26N50 | BRU24N50 | BRI7N65 | BRI7N60 | BRI740 | BRI65R380C | BRI5N65 | BRI50N06 | BRI4N70 | BRI2N70 | BRGN250N65YK | BRFL8N65 | BRFL7N65S | BRFL70R360C | BRFL65R380C