MDD1904RH PDF and Equivalents Search

 

MDD1904RH Specs and Replacement

Type Designator: MDD1904RH

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 35.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.6 nS

Cossⓘ - Output Capacitance: 51 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm

Package: TO-252

MDD1904RH substitution

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MDD1904RH datasheet

 ..1. Size:992K  magnachip
mdd1904rh.pdf pdf_icon

MDD1904RH

MDD1904 Single N-channel Trench MOSFET 100V, 10.8A, 140m General Description Features The MDD1904 uses advanced MagnaChip s MOSFET V = 100V DS Technology, which provides high performance in on-state I = 10.8A @V = 10V D GS resistance, fast switching performance and excellent R DS(ON) (MAX) quality. MDD1904 is suitable device for DC to DC ... See More ⇒

 8.1. Size:881K  magnachip
mdd1902rh.pdf pdf_icon

MDD1904RH

MDD1902 Single N-channel Trench MOSFET 100V, 40A, 28m General Description Features The MDD1902 uses advanced MagnaChip s MOSFET VDS = 100V Technology, which provides high performance in on-state I = 40A @V = 10V D GS resistance, fast switching performance and excellent R DS(ON) quality. MDD1902 is suitable device for DC/DC ... See More ⇒

 8.2. Size:802K  magnachip
mdd1903rh.pdf pdf_icon

MDD1904RH

MDD1903 Single N-channel Trench MOSFET 100V, 12.8A, 105m General Description Features The MDD1903 uses advanced MagnaChip s MOSFET V = 100V DS Technology, which provides high performance in on-state I = 12.8A @V = 10V D GS resistance, fast switching performance and excellent R DS(ON) (MAX) quality. MDD1903 is suitable device for DC to DC ... See More ⇒

 8.3. Size:841K  magnachip
mdd1901rh.pdf pdf_icon

MDD1904RH

MDD1901 Single N-channel Trench MOSFET 100V, 40A, 22m General Description Features The MDD1901 uses advanced MagnaChip s MOSFET VDS = 100V Technology, which provides high performance in on-state I = 40A @V = 10V D GS resistance, fast switching performance and excellent R DS(ON) quality. MDD1901 is suitable device for DC/DC ... See More ⇒

Detailed specifications: MDD1503RH, MDD1504RH, MDD1752RH, MDD1754RH, MDD1851RH, MDD1901RH, MDD1902RH, MDD1903RH, IRLB3034, MDD1951RH, MDD2N60RH, MDD3752ARH, MDD3752RH, MDD3754RH, MDD3N40RH, MDD3N50GRH, MDD4N20YRH

Keywords - MDD1904RH MOSFET specs

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