MDD4N20YRH MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MDD4N20YRH
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 27 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 38 nS
Cossⓘ - Capacitancia de salida: 42.7 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.35 Ohm
Encapsulados: TO-252
Búsqueda de reemplazo de MDD4N20YRH MOSFET
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MDD4N20YRH datasheet
mdd4n20yrh.pdf
MDD4N20Y N-Channel MOSFET 200V, 3.0A, 1.35 General Description Features The MDD4N20Y uses advanced Magnachip s VDS = 200V MOSFET Technology, which provides low on-state ID = 3.0A @VGS = 10V resistance, high switching performance and RDS(ON) 1.35 @VGS = 10V excellent quality. MDD4N20Y is suitable device for SMPS, high Speed switching and general purpose applicat
mdd4n25rh.pdf
MDD4N25 N-Channel MOSFET 250V, 3.0A, 1.75 General Description Features The MDD4N25 uses advanced Magnachip s V = 250V DS MOSFET Technology, which provides low on-state I = 3.0A D resistance, high switching performance and RDS(ON) 1.75 @VGS = 10V excellent quality. MDD4N25 is suitable device for SMPS, HID and Applications general purpose applicatio
mdd4n60brh mdi4n60bth.pdf
MDD4N60 / MDI4N60B N-Channel MOSFET 600V, 3.5A, 2.0 General Description Features The MDD/I4N60B uses advanced Magnachip s MOSFET VDS = 600V Technology, which provides low on-state resistance, high ID = 3.5A @ VGS = 10V switching performance and excellent quality. RDS(ON) 2.0 @ VGS = 10V MDD/I4N60B is suitable device for SMPS, HID and general Applications
Otros transistores... MDD1904RH , MDD1951RH , MDD2N60RH , MDD3752ARH , MDD3752RH , MDD3754RH , MDD3N40RH , MDD3N50GRH , AOD4184A , MDD4N25RH , MDD4N60BRH , MDD5N40RH , MDD5N50FRH , MDD5N50RH , MDD5N50ZRH , MDD6N60GRH , MDD7N20CRH .
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