MDD4N20YRH Datasheet and Replacement
Type Designator: MDD4N20YRH
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 27 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 38 nS
Cossⓘ - Output Capacitance: 42.7 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.35 Ohm
Package: TO-252
MDD4N20YRH substitution
MDD4N20YRH Datasheet (PDF)
mdd4n20yrh.pdf

MDD4N20YN-Channel MOSFET 200V, 3.0A, 1.35General Description Features The MDD4N20Y uses advanced Magnachips VDS = 200V MOSFET Technology, which provides low on-state ID = 3.0A @VGS = 10V resistance, high switching performance and RDS(ON) 1.35 @VGS = 10V excellent quality. MDD4N20Y is suitable device for SMPS, high Speed switching and general purpose applicat
mdd4n25rh.pdf

MDD4N25 N-Channel MOSFET 250V, 3.0A, 1.75 General Description Features The MDD4N25 uses advanced Magnachips V = 250V DSMOSFET Technology, which provides low on-state I = 3.0A Dresistance, high switching performance and RDS(ON) 1.75 @VGS = 10V excellent quality. MDD4N25 is suitable device for SMPS, HID and Applications general purpose applicatio
mdd4n60brh mdi4n60bth.pdf

MDD4N60 / MDI4N60B N-Channel MOSFET 600V, 3.5A, 2.0General Description Features The MDD/I4N60B uses advanced Magnachips MOSFET VDS = 600V Technology, which provides low on-state resistance, high ID = 3.5A @ VGS = 10V switching performance and excellent quality. RDS(ON) 2.0 @ VGS = 10V MDD/I4N60B is suitable device for SMPS, HID and general Applications
Datasheet: MDD1904RH , MDD1951RH , MDD2N60RH , MDD3752ARH , MDD3752RH , MDD3754RH , MDD3N40RH , MDD3N50GRH , HY1906P , MDD4N25RH , MDD4N60BRH , MDD5N40RH , MDD5N50FRH , MDD5N50RH , MDD5N50ZRH , MDD6N60GRH , MDD7N20CRH .
History: LND5N65B
Keywords - MDD4N20YRH MOSFET datasheet
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History: LND5N65B



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