MDF10N65BTH Todos los transistores

 

MDF10N65BTH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MDF10N65BTH
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 47.7 W
   Voltaje máximo drenador - fuente |Vds|: 650 V
   Voltaje máximo fuente - puerta |Vgs|: 30 V
   Corriente continua de drenaje |Id|: 10 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tiempo de subida (tr): 48 nS
   Conductancia de drenaje-sustrato (Cd): 128.3 pF
   Resistencia entre drenaje y fuente RDS(on): 1 Ohm
   Paquete / Cubierta: TO-220F

 Búsqueda de reemplazo de MOSFET MDF10N65BTH

 

MDF10N65BTH Datasheet (PDF)

 ..1. Size:881K  magnachip
mdf10n65bth.pdf

MDF10N65BTH MDF10N65BTH

MDF10N65B N-Channel MOSFET 650V, 10.0A, 1.0 General Description Features The MDF10N65B MOSFET are produced using advanced V = 650V DSMagnaChips MOSFET Technology, which provides low on- I = 10.0A @ V = 10V D GSstate resistance, high switching performance and excellent R 1.0 @ V = 10V DS(ON) GSquality. Applications MDF10N65B is suitable device for

 7.1. Size:780K  magnachip
mdf10n60bth.pdf

MDF10N65BTH MDF10N65BTH

MDF10N60B N-Channel MOSFET 600V, 10A, 0.7General Description Features These N-channel MOSFET are produced using advanced VDS = 600V MagnaChips MOSFET Technology, which provides low on- ID = 10A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON) 0.7 @ VGS = 10V quality. Applications These devices are suitable device for SMPS, high Speed

 7.2. Size:1143K  magnachip
mdf10n60gth mdp10n60gth.pdf

MDF10N65BTH MDF10N65BTH

MDP10N60G/MDF10N60G N-Channel MOSFET 600V, 10A, 0.7General Description Features These N-channel MOSFET are produced using advanced V = 600V DSMagnaChips MOSFET Technology, which provides low on- VDS = 660V @ Tjmax state resistance, high switching performance and excellent ID = 10A @ VGS = 10V quality. RDS(ON) 0.7 @ VGS = 10V Applications These devices are suitabl

 7.3. Size:206K  inchange semiconductor
mdf10n60gth.pdf

MDF10N65BTH MDF10N65BTH

INCHANGE Semiconductorisc N-Channel MOSFET Transistor MDF10N60GTHFEATURESWith TO-220 packagingLow switching lossUltra low gate chargeEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsAC-DC convertersLED lightingUninterruptible power supplyABSO

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
Back to Top

 


MDF10N65BTH
  MDF10N65BTH
  MDF10N65BTH
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: MRF5035 | MRF5015 | MRF5007R1 | MRF5007 | MRF5003 | MRF275G | MRF184S | MRF184 | MRF177M | MRF177 | MRF176GV | MRF176GU | MRF175LV | MRF175LU | MRF175GV | MRF175GU

 

 

 
Back to Top