MDF10N65BTH MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: MDF10N65BTH
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 47.7 W
Предельно допустимое напряжение сток-исток |Uds|: 650 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 10 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 29.3 nC
Время нарастания (tr): 48 ns
Выходная емкость (Cd): 128.3 pf
Сопротивление сток-исток открытого транзистора (Rds): 1 Ohm
Тип корпуса: TO-220F
Аналог (замена) для MDF10N65BTH
MDF10N65BTH Datasheet (PDF)
mdf10n65bth.pdf
MDF10N65B N-Channel MOSFET 650V, 10.0A, 1.0 General Description Features The MDF10N65B MOSFET are produced using advanced V = 650V DSMagnaChips MOSFET Technology, which provides low on- I = 10.0A @ V = 10V D GSstate resistance, high switching performance and excellent R 1.0 @ V = 10V DS(ON) GSquality. Applications MDF10N65B is suitable device for
mdf10n60bth.pdf
MDF10N60B N-Channel MOSFET 600V, 10A, 0.7General Description Features These N-channel MOSFET are produced using advanced VDS = 600V MagnaChips MOSFET Technology, which provides low on- ID = 10A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON) 0.7 @ VGS = 10V quality. Applications These devices are suitable device for SMPS, high Speed
mdf10n60gth mdp10n60gth.pdf
MDP10N60G/MDF10N60G N-Channel MOSFET 600V, 10A, 0.7General Description Features These N-channel MOSFET are produced using advanced V = 600V DSMagnaChips MOSFET Technology, which provides low on- VDS = 660V @ Tjmax state resistance, high switching performance and excellent ID = 10A @ VGS = 10V quality. RDS(ON) 0.7 @ VGS = 10V Applications These devices are suitabl
mdf10n60gth.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor MDF10N60GTHFEATURESWith TO-220 packagingLow switching lossUltra low gate chargeEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsAC-DC convertersLED lightingUninterruptible power supplyABSO
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
