MDF10N65BTH - описание и поиск аналогов

 

MDF10N65BTH. Аналоги и основные параметры

Наименование производителя: MDF10N65BTH

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 47.7 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 10 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 48 ns

Cossⓘ - Выходная емкость: 128.3 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 1 Ohm

Тип корпуса: TO-220F

Аналог (замена) для MDF10N65BTH

- подборⓘ MOSFET транзистора по параметрам

 

MDF10N65BTH даташит

 ..1. Size:881K  magnachip
mdf10n65bth.pdfpdf_icon

MDF10N65BTH

MDF10N65B N-Channel MOSFET 650V, 10.0A, 1.0 General Description Features The MDF10N65B MOSFET are produced using advanced V = 650V DS MagnaChip s MOSFET Technology, which provides low on- I = 10.0A @ V = 10V D GS state resistance, high switching performance and excellent R 1.0 @ V = 10V DS(ON) GS quality. Applications MDF10N65B is suitable device for

 7.1. Size:780K  magnachip
mdf10n60bth.pdfpdf_icon

MDF10N65BTH

MDF10N60B N-Channel MOSFET 600V, 10A, 0.7 General Description Features These N-channel MOSFET are produced using advanced VDS = 600V MagnaChip s MOSFET Technology, which provides low on- ID = 10A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON) 0.7 @ VGS = 10V quality. Applications These devices are suitable device for SMPS, high Speed

 7.2. Size:1143K  magnachip
mdf10n60gth mdp10n60gth.pdfpdf_icon

MDF10N65BTH

MDP10N60G/MDF10N60G N-Channel MOSFET 600V, 10A, 0.7 General Description Features These N-channel MOSFET are produced using advanced V = 600V DS MagnaChip s MOSFET Technology, which provides low on- VDS = 660V @ Tjmax state resistance, high switching performance and excellent ID = 10A @ VGS = 10V quality. RDS(ON) 0.7 @ VGS = 10V Applications These devices are suitabl

 7.3. Size:206K  inchange semiconductor
mdf10n60gth.pdfpdf_icon

MDF10N65BTH

INCHANGE Semiconductor isc N-Channel MOSFET Transistor MDF10N60GTH FEATURES With TO-220 packaging Low switching loss Ultra low gate charge Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS Switching applications AC-DC converters LED lighting Uninterruptible power supply ABSO

Другие MOSFET... MDD6N60GRH , MDD7N20CRH , MDD7N25RH , MDD9N40RH , MDE1752RH , MDF10N50TH , MDF10N60BTH , MDF10N60GTH , IRFZ44 , MDF11N60TH , MDF11N65BTH , MDF12N50BTH , MDF12N50FTH , MDF13N50BTH , MDF13N50GTH , MDF13N65BTH , MDF15N60GTH .

History: SUM2153

 

 

 

 

↑ Back to Top
.