MDF10N65BTH MOSFET Datasheet: N-Ch, 650V, 10A. Full specification with pinout and replacement list

MDF10N65BTH Specs and Replacement

Type Designator: MDF10N65BTH

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 47.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 48 nS

Cossⓘ - Output Capacitance: 128.3 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm

Package: TO-220F

MDF10N65BTH substitution

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MDF10N65BTH datasheet

..1. Size:881K magnachip
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MDF10N65B N-Channel MOSFET 650V, 10.0A, 1.0 General Description Features The MDF10N65B MOSFET are produced using advanced V = 650V DS MagnaChip s MOSFET Technology, which provides low on- I = 10.0A @ V = 10V D GS state resistance, high switching performance and excellent R 1.0 @ V = 10V DS(ON) GS quality. Applications MDF10N65B is suitable device for ... See More ⇒

7.1. Size:780K magnachip
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MDF10N60B N-Channel MOSFET 600V, 10A, 0.7 General Description Features These N-channel MOSFET are produced using advanced VDS = 600V MagnaChip s MOSFET Technology, which provides low on- ID = 10A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON) 0.7 @ VGS = 10V quality. Applications These devices are suitable device for SMPS, high Speed ... See More ⇒

7.2. Size:1143K magnachip
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MDP10N60G/MDF10N60G N-Channel MOSFET 600V, 10A, 0.7 General Description Features These N-channel MOSFET are produced using advanced V = 600V DS MagnaChip s MOSFET Technology, which provides low on- VDS = 660V @ Tjmax state resistance, high switching performance and excellent ID = 10A @ VGS = 10V quality. RDS(ON) 0.7 @ VGS = 10V Applications These devices are suitabl... See More ⇒

7.3. Size:206K inchange semiconductor
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INCHANGE Semiconductor isc N-Channel MOSFET Transistor MDF10N60GTH FEATURES With TO-220 packaging Low switching loss Ultra low gate charge Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS Switching applications AC-DC converters LED lighting Uninterruptible power supply ABSO... See More ⇒

Detailed specifications: MDD6N60GRH, MDD7N20CRH, MDD7N25RH, MDD9N40RH, MDE1752RH, MDF10N50TH, MDF10N60BTH, MDF10N60GTH, IRFZ44, MDF11N60TH, MDF11N65BTH, MDF12N50BTH, MDF12N50FTH, MDF13N50BTH, MDF13N50GTH, MDF13N65BTH, MDF15N60GTH