MDF2N60BTH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MDF2N60BTH
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 22.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 7.6 nC
   trⓘ - Tiempo de subida: 22.2 nS
   Cossⓘ - Capacitancia de salida: 30.3 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 4.5 Ohm
   Paquete / Cubierta: TO-220F

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MDF2N60BTH Datasheet (PDF)

..1. Size:861K magnachip
mdf2n60bth.pdf

MDF2N60B N-Channel MOSFET 600V, 2.0A, 4.5General Description Features These N-channel MOSFET are produced using advanced VDS = 600V MagnaChips MOSFET Technology, which provides low on- ID = 2.0A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON) 4.5 @ VGS = 10V quality. Applications These devices are suitable device for SMP

7.1. Size:1080K magnachip
mdf2n60th mdf2n60tp mdp2n60th mdp2n60tp.pdf

MDP2N60/MDF2N60 N-Channel MOSFET 600V, 2.0A, 4.5General Description Features These N-channel MOSFET are produced using advanced V = 600V DSMagnaChips MOSFET Technology, which provides low on- I = 2.0A @ V = 10V D GSstate resistance, high switching performance and excellent R 4.5 @ V = 10V DS(ON) GSquality. Applications These devices are suitable device for SM

9.1. Size:102K motorola
mmdf2n06vl.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF2N06VL/DProduct PreviewMMDF2N06VLTMOS VSO-8 for Surface MountNChannel EnhancementMode Silicon GateDUAL TMOS MOSFETTMOS V is a new technology designed to achieve an onresis-2.5 AMPEREStance area product about onehalf that of standard MOSFETs. This60 VOLTSnew technology more than doubles the p

9.2. Size:196K motorola
mmdf2n05z.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF2N05ZR2/DDesigner's Data SheetMMDF2N05ZR2Medium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Dual N-Channel withMonolithic Zener ESDDUAL TMOSPOWER MOSFETProtected Gate2.0 AMPERES50 VOLTSEZFETs are an advanced series of power MOSFETs whichRDS(on) = 0.300 OHMutilize Motorolas High

9.3. Size:101K motorola
mmdf2n06v.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF2N06V/DProduct PreviewMMDF2N06VTMOS VSO-8 for Surface MountNChannel EnhancementMode Silicon GateDUAL TMOS MOSFETTMOS V is a new technology designed to achieve an onresis-3.3 AMPEREStance area product about onehalf that of standard MOSFETs. This60 VOLTSnew technology more than doubles the pre

9.4. Size:273K motorola
mmdf2n05.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF2N05ZR2/DAdvance InformationMMDF2N05ZR2Medium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Dual N-Channel withMonolithic Zener ESDDUAL TMOSPOWER MOSFETProtected Gate 2.0 AMPERESEZFETs are an advanced series of power MOSFETs which50 VOLTSutilize Motorolas High Cell Density TMOS proces

9.5. Size:191K motorola
mmdf2n05zr2rev1.pdf

9.6. Size:235K motorola
mmdf2n02e.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF2N02E/DDesigner's Data SheetMMDF2N02EMedium Power Surface Mount ProductsTMOS Dual N-ChannelField Effect TransistorsDUAL TMOS MOSFETMiniMOS devices are an advanced series of power MOSFETs3.6 AMPERESwhich utilize Motorolas TMOS process. These miniature surface25 VOLTSmount MOSFETs feature ultra low

9.7. Size:276K motorola
mmdf2n02.pdf

9.8. Size:94K onsemi
mmdf2n02e.pdf

MMDF2N02EPower MOSFET2 Amps, 25 VoltsN-Channel SO-8, DualThese miniature surface mount MOSFETs feature ultra low RDS(on)and true logic level performance. They are capable of withstandinghttp://onsemi.comhigh energy in the avalanche and commutation modes and thedrain-to-source diode has a low reverse recovery time. MiniMOSt2 AMPERES, 25 VOLTSdevices are designed for use in lo

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