MDF2N60BTH - Даташиты. Аналоги. Основные параметры

MDF2N60B N-Channel MOSFET 600V, 2.0A, 4.5General Description Features These N-channel MOSFET are produced using advanced VDS = 600V MagnaChips MOSFET Technology, which provides low on- ID = 2.0A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON) 4.5 @ VGS = 10V quality. Applications These devices are suitable device for SMP

MDP2N60/MDF2N60 N-Channel MOSFET 600V, 2.0A, 4.5General Description Features These N-channel MOSFET are produced using advanced V = 600V DSMagnaChips MOSFET Technology, which provides low on- I = 2.0A @ V = 10V D GSstate resistance, high switching performance and excellent R 4.5 @ V = 10V DS(ON) GSquality. Applications These devices are suitable device for SM

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF2N06VL/DProduct PreviewMMDF2N06VLTMOS VSO-8 for Surface MountNChannel EnhancementMode Silicon GateDUAL TMOS MOSFETTMOS V is a new technology designed to achieve an onresis-2.5 AMPEREStance area product about onehalf that of standard MOSFETs. This60 VOLTSnew technology more than doubles the p

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF2N05ZR2/DDesigner's Data SheetMMDF2N05ZR2Medium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Dual N-Channel withMonolithic Zener ESDDUAL TMOSPOWER MOSFETProtected Gate2.0 AMPERES50 VOLTSEZFETs are an advanced series of power MOSFETs whichRDS(on) = 0.300 OHMutilize Motorolas High

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF2N06V/DProduct PreviewMMDF2N06VTMOS VSO-8 for Surface MountNChannel EnhancementMode Silicon GateDUAL TMOS MOSFETTMOS V is a new technology designed to achieve an onresis-3.3 AMPEREStance area product about onehalf that of standard MOSFETs. This60 VOLTSnew technology more than doubles the pre

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF2N05ZR2/DAdvance InformationMMDF2N05ZR2Medium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Dual N-Channel withMonolithic Zener ESDDUAL TMOSPOWER MOSFETProtected Gate 2.0 AMPERESEZFETs are an advanced series of power MOSFETs which50 VOLTSutilize Motorolas High Cell Density TMOS proces

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF2N05ZR2/DDesigner's Data SheetMMDF2N05ZR2Medium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Dual N-Channel withMonolithic Zener ESDDUAL TMOSPOWER MOSFETProtected Gate2.0 AMPERES50 VOLTSEZFETs are an advanced series of power MOSFETs whichRDS(on) = 0.300 OHMutilize Motorolas High

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF2N02E/DDesigner's Data SheetMMDF2N02EMedium Power Surface Mount ProductsTMOS Dual N-ChannelField Effect TransistorsDUAL TMOS MOSFETMiniMOS devices are an advanced series of power MOSFETs3.6 AMPERESwhich utilize Motorolas TMOS process. These miniature surface25 VOLTSmount MOSFETs feature ultra low

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF2N02E/DDesigner's Data SheetMMDF2N02EMedium Power Surface Mount ProductsTMOS Dual N-ChannelField Effect TransistorsDUAL TMOS MOSFETMiniMOS devices are an advanced series of power MOSFETs3.6 AMPERESwhich utilize Motorolas TMOS process. These miniature surface25 VOLTSmount MOSFETs feature ultra low

MMDF2N02EPower MOSFET2 Amps, 25 VoltsN-Channel SO-8, DualThese miniature surface mount MOSFETs feature ultra low RDS(on)and true logic level performance. They are capable of withstandinghttp://onsemi.comhigh energy in the avalanche and commutation modes and thedrain-to-source diode has a low reverse recovery time. MiniMOSt2 AMPERES, 25 VOLTSdevices are designed for use in lo