All MOSFET. MDF2N60BTH Datasheet

 

MDF2N60BTH Datasheet and Replacement


   Type Designator: MDF2N60BTH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 22.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 22.2 nS
   Cossⓘ - Output Capacitance: 30.3 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 4.5 Ohm
   Package: TO-220F
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MDF2N60BTH Datasheet (PDF)

 ..1. Size:861K  magnachip
 mdf2n60bth.pdf pdf_icon

MDF2N60BTH

MDF2N60B N-Channel MOSFET 600V, 2.0A, 4.5General Description Features These N-channel MOSFET are produced using advanced VDS = 600V MagnaChips MOSFET Technology, which provides low on- ID = 2.0A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON) 4.5 @ VGS = 10V quality. Applications These devices are suitable device for SMP

 7.1. Size:1080K  magnachip
 mdf2n60th mdf2n60tp mdp2n60th mdp2n60tp.pdf pdf_icon

MDF2N60BTH

MDP2N60/MDF2N60 N-Channel MOSFET 600V, 2.0A, 4.5General Description Features These N-channel MOSFET are produced using advanced V = 600V DSMagnaChips MOSFET Technology, which provides low on- I = 2.0A @ V = 10V D GSstate resistance, high switching performance and excellent R 4.5 @ V = 10V DS(ON) GSquality. Applications These devices are suitable device for SM

 9.1. Size:102K  motorola
 mmdf2n06vl.pdf pdf_icon

MDF2N60BTH

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF2N06VL/DProduct PreviewMMDF2N06VLTMOS VSO-8 for Surface MountNChannel EnhancementMode Silicon GateDUAL TMOS MOSFETTMOS V is a new technology designed to achieve an onresis-2.5 AMPEREStance area product about onehalf that of standard MOSFETs. This60 VOLTSnew technology more than doubles the p

 9.2. Size:196K  motorola
 mmdf2n05z.pdf pdf_icon

MDF2N60BTH

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF2N05ZR2/DDesigner's Data SheetMMDF2N05ZR2Medium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Dual N-Channel withMonolithic Zener ESDDUAL TMOSPOWER MOSFETProtected Gate2.0 AMPERES50 VOLTSEZFETs are an advanced series of power MOSFETs whichRDS(on) = 0.300 OHMutilize Motorolas High

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