MDF4N60DTH Todos los transistores

 

MDF4N60DTH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MDF4N60DTH
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 34.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 13.8 nS
   Cossⓘ - Capacitancia de salida: 63.3 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.2 Ohm
   Paquete / Cubierta: TO-220F
 

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MDF4N60DTH Datasheet (PDF)

 ..1. Size:845K  magnachip
 mdf4n60dth.pdf pdf_icon

MDF4N60DTH

MDF4N60D N-Channel MOSFET 600V, 4.0A, 2.2General Description Features These N-channel MOSFET are produced using advanced VDS = 600V MagnaChips MOSFET Technology, which provides low on- ID = 4.0A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON) 2.2 @ VGS = 10V quality. Applications These devices are suitable device for SMPS, high Speed

 7.1. Size:943K  magnachip
 mdf4n60bth.pdf pdf_icon

MDF4N60DTH

MDF4N60B N-Channel MOSFET 600V, 4.6A, 2.0 General Description Features These N-channel MOSFET are produced using advanced V = 600V DSMagnaChips MOSFET Technology, which provides low on- I = 4.6A @ V = 10V D GSstate resistance, high switching performance and excellent R 2.0 @ V = 10V DS(ON) GSquality. Applications These devices are suitable device

 7.2. Size:1239K  magnachip
 mdf4n60th mdf4n60tp mdp4n60th mdp4n60tp.pdf pdf_icon

MDF4N60DTH

MDP4N60/MDF4N60 N-Channel MOSFET 600V, 4.6A, 2.0 General Description Features These N-channel MOSFET are produced using advanced V = 600V DSMagnaChips MOSFET Technology, which provides low on- I = 4.6A @ V = 10V D GSstate resistance, high switching performance and excellent R 2.0 @ V = 10V DS(ON) GSquality. Applications These devices are suitable

 8.1. Size:758K  magnachip
 mdf4n65bth.pdf pdf_icon

MDF4N60DTH

MDF4N65B N-Channel MOSFET 650V, 4.0A, 2.2General Description Features These N-channel MOSFET are produced using advanced VDS = 650V MagnaChips MOSFET Technology, which provides low on- ID = 4.0A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON) 2.2 @ VGS = 10V quality. Applications These devices are suitable device for SMPS, high Speed

MOSTRAR MÁS

Otros transistores... MDF16N50GTH , MDF18N50BTH , MDF1903TH , MDF2N60BTH , MDF2N60TH , MDF2N60TP , MDF3752TH , MDF4N60BTH , AON7408 , MDF4N60TH , MDF4N60TP , MDF4N65BTH , MDF5N50BTH , MDF5N50FBTH , MDF5N50FTH , MDF5N50ZTH , MDF6N60BTH .

History: SIHFIBE20G | SDF130JDA-S | TK39J60W5 | AOT14N50FD | SVG066R5NSA | 2SK3775-01 | AP20N15GH-HF

 

 
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