Справочник MOSFET. MDF4N60DTH

 

MDF4N60DTH Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: MDF4N60DTH
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 34.7 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 4 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 13.8 ns
   Cossⓘ - Выходная емкость: 63.3 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 2.2 Ohm
   Тип корпуса: TO-220F
 

 Аналог (замена) для MDF4N60DTH

   - подбор ⓘ MOSFET транзистора по параметрам

 

MDF4N60DTH Datasheet (PDF)

 ..1. Size:845K  magnachip
mdf4n60dth.pdfpdf_icon

MDF4N60DTH

MDF4N60D N-Channel MOSFET 600V, 4.0A, 2.2General Description Features These N-channel MOSFET are produced using advanced VDS = 600V MagnaChips MOSFET Technology, which provides low on- ID = 4.0A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON) 2.2 @ VGS = 10V quality. Applications These devices are suitable device for SMPS, high Speed

 7.1. Size:943K  magnachip
mdf4n60bth.pdfpdf_icon

MDF4N60DTH

MDF4N60B N-Channel MOSFET 600V, 4.6A, 2.0 General Description Features These N-channel MOSFET are produced using advanced V = 600V DSMagnaChips MOSFET Technology, which provides low on- I = 4.6A @ V = 10V D GSstate resistance, high switching performance and excellent R 2.0 @ V = 10V DS(ON) GSquality. Applications These devices are suitable device

 7.2. Size:1239K  magnachip
mdf4n60th mdf4n60tp mdp4n60th mdp4n60tp.pdfpdf_icon

MDF4N60DTH

MDP4N60/MDF4N60 N-Channel MOSFET 600V, 4.6A, 2.0 General Description Features These N-channel MOSFET are produced using advanced V = 600V DSMagnaChips MOSFET Technology, which provides low on- I = 4.6A @ V = 10V D GSstate resistance, high switching performance and excellent R 2.0 @ V = 10V DS(ON) GSquality. Applications These devices are suitable

 8.1. Size:758K  magnachip
mdf4n65bth.pdfpdf_icon

MDF4N60DTH

MDF4N65B N-Channel MOSFET 650V, 4.0A, 2.2General Description Features These N-channel MOSFET are produced using advanced VDS = 650V MagnaChips MOSFET Technology, which provides low on- ID = 4.0A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON) 2.2 @ VGS = 10V quality. Applications These devices are suitable device for SMPS, high Speed

Другие MOSFET... MDF16N50GTH , MDF18N50BTH , MDF1903TH , MDF2N60BTH , MDF2N60TH , MDF2N60TP , MDF3752TH , MDF4N60BTH , AON7408 , MDF4N60TH , MDF4N60TP , MDF4N65BTH , MDF5N50BTH , MDF5N50FBTH , MDF5N50FTH , MDF5N50ZTH , MDF6N60BTH .

History: APQ14SN65AH | NDD02N60Z | SIZ300DT | TK13A60W | IRFI9Z24GPBF | 2N7271H2

 

 
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