All MOSFET. MDF4N60DTH Datasheet

 

MDF4N60DTH MOSFET. Datasheet pdf. Equivalent


   Type Designator: MDF4N60DTH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 34.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 14 nC
   trⓘ - Rise Time: 13.8 nS
   Cossⓘ - Output Capacitance: 63.3 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm
   Package: TO-220F

 MDF4N60DTH Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MDF4N60DTH Datasheet (PDF)

 ..1. Size:845K  magnachip
 mdf4n60dth.pdf

MDF4N60DTH MDF4N60DTH

MDF4N60D N-Channel MOSFET 600V, 4.0A, 2.2General Description Features These N-channel MOSFET are produced using advanced VDS = 600V MagnaChips MOSFET Technology, which provides low on- ID = 4.0A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON) 2.2 @ VGS = 10V quality. Applications These devices are suitable device for SMPS, high Speed

 7.1. Size:943K  magnachip
 mdf4n60bth.pdf

MDF4N60DTH MDF4N60DTH

MDF4N60B N-Channel MOSFET 600V, 4.6A, 2.0 General Description Features These N-channel MOSFET are produced using advanced V = 600V DSMagnaChips MOSFET Technology, which provides low on- I = 4.6A @ V = 10V D GSstate resistance, high switching performance and excellent R 2.0 @ V = 10V DS(ON) GSquality. Applications These devices are suitable device

 7.2. Size:1239K  magnachip
 mdf4n60th mdf4n60tp mdp4n60th mdp4n60tp.pdf

MDF4N60DTH MDF4N60DTH

MDP4N60/MDF4N60 N-Channel MOSFET 600V, 4.6A, 2.0 General Description Features These N-channel MOSFET are produced using advanced V = 600V DSMagnaChips MOSFET Technology, which provides low on- I = 4.6A @ V = 10V D GSstate resistance, high switching performance and excellent R 2.0 @ V = 10V DS(ON) GSquality. Applications These devices are suitable

 8.1. Size:758K  magnachip
 mdf4n65bth.pdf

MDF4N60DTH MDF4N60DTH

MDF4N65B N-Channel MOSFET 650V, 4.0A, 2.2General Description Features These N-channel MOSFET are produced using advanced VDS = 650V MagnaChips MOSFET Technology, which provides low on- ID = 4.0A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON) 2.2 @ VGS = 10V quality. Applications These devices are suitable device for SMPS, high Speed

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top