MDF7N50BTH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MDF7N50BTH
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 36 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 14.9 nC
   trⓘ - Tiempo de subida: 30 nS
   Cossⓘ - Capacitancia de salida: 97 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.9 Ohm
   Paquete / Cubierta: TO-220F

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MDF7N50BTH Datasheet (PDF)

..1. Size:1175K magnachip
mdf7n50bth mdp7n50bth.pdf

MDP7N50B / MDF7N50B N-Channel MOSFET 500V, 7.0 A, 0.9General Description Features The MDP/F7N50B uses advanced Magnachips VDS = 500V MOSFET Technology, which provides low on-state ID = 7.0A @VGS = 10V resistance, high switching performance and RDS(ON) 0.9 @VGS = 10V excellent quality. MDP/F7N50B is suitable device for SMPS, high Applications Speed switching an

9.1. Size:190K motorola
mmdf7n02zrev0.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF7N02Z/DAdvance InformationMMDF7N02ZMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Dual N-Channel withMonolithic Zener ESD Protected GateDUAL TMOSPOWER MOSFETEZFETs are an advanced series of power MOSFETs which7.0 AMPERESutilize Motorolas High Cell Density TMOS process and contain2

9.2. Size:195K motorola
mmdf7n02z.pdf

9.3. Size:840K magnachip
mdf7n65bth.pdf

MDF7N65B N-Channel MOSFET 650V, 7.0A, 1.35 General Description Features These N-channel MOSFET are produced using advanced V = 650V DSMagnaChips MOSFET Technology, which provides low on- I = 7.0A @ V = 10V D GSstate resistance, high switching performance and excellent R 1.35 @ V = 10V DS(ON) GSquality. Applications These devices are suitable devic

9.4. Size:1118K magnachip
mdf7n60bth mdp7n60bth.pdf

MDP7N60B / MDF7N60B N-Channel MOSFET 600V, 7.0A, 1.15 General Description Features These N-channel MOSFET are produced using advanced V = 600V DSMagnaChips MOSFET Technology, which provides low on- V = 660V @ T DS jmaxstate resistance, high switching performance and excellent I = 7.0A @ V = 10V D GSquality. RDS(ON) 1.15 @ VGS = 10V Applications These devices

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