MDF7N50BTH MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MDF7N50BTH
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 36 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 30 nS
Cossⓘ - Capacitancia de salida: 97 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.9 Ohm
Encapsulados: TO-220F
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MDF7N50BTH datasheet
mdf7n50bth mdp7n50bth.pdf
MDP7N50B / MDF7N50B N-Channel MOSFET 500V, 7.0 A, 0.9 General Description Features The MDP/F7N50B uses advanced Magnachip s VDS = 500V MOSFET Technology, which provides low on-state ID = 7.0A @VGS = 10V resistance, high switching performance and RDS(ON) 0.9 @VGS = 10V excellent quality. MDP/F7N50B is suitable device for SMPS, high Applications Speed switching an
mmdf7n02zrev0.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMDF7N02Z/D Advance Information MMDF7N02Z Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual N-Channel with Monolithic Zener ESD Protected Gate DUAL TMOS POWER MOSFET EZFETs are an advanced series of power MOSFETs which 7.0 AMPERES utilize Motorola s High Cell Density TMOS process and contain 2
mmdf7n02z.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMDF7N02Z/D Advance Information MMDF7N02Z Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual N-Channel with Monolithic Zener ESD Protected Gate DUAL TMOS POWER MOSFET EZFETs are an advanced series of power MOSFETs which 7.0 AMPERES utilize Motorola s High Cell Density TMOS process and contain 2
mdf7n65bth.pdf
MDF7N65B N-Channel MOSFET 650V, 7.0A, 1.35 General Description Features These N-channel MOSFET are produced using advanced V = 650V DS MagnaChip s MOSFET Technology, which provides low on- I = 7.0A @ V = 10V D GS state resistance, high switching performance and excellent R 1.35 @ V = 10V DS(ON) GS quality. Applications These devices are suitable devic
Otros transistores... MDF4N65BTH , MDF5N50BTH , MDF5N50FBTH , MDF5N50FTH , MDF5N50ZTH , MDF6N60BTH , MDF6N60TH , MDF6N65BTH , K3569 , MDF7N60BTH , MDF7N65BTH , MDF8N60BTH , MDF9N50BTH , MDF9N50FTH , MDF9N60BTH , MDFS10N60DTH , MDFS4N65DTH .
History: MS50N06
History: MS50N06
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