MDF7N50BTH Specs and Replacement
Type Designator: MDF7N50BTH
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 36 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 4 V
Qg ⓘ - Total Gate Charge: 14.9 nC
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 97 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
Package: TO-220F
MDF7N50BTH substitution
- MOSFET ⓘ Cross-Reference Search
MDF7N50BTH datasheet
mdf7n50bth mdp7n50bth.pdf
MDP7N50B / MDF7N50B N-Channel MOSFET 500V, 7.0 A, 0.9 General Description Features The MDP/F7N50B uses advanced Magnachip s VDS = 500V MOSFET Technology, which provides low on-state ID = 7.0A @VGS = 10V resistance, high switching performance and RDS(ON) 0.9 @VGS = 10V excellent quality. MDP/F7N50B is suitable device for SMPS, high Applications Speed switching an... See More ⇒
mmdf7n02zrev0.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMDF7N02Z/D Advance Information MMDF7N02Z Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual N-Channel with Monolithic Zener ESD Protected Gate DUAL TMOS POWER MOSFET EZFETs are an advanced series of power MOSFETs which 7.0 AMPERES utilize Motorola s High Cell Density TMOS process and contain 2... See More ⇒
mmdf7n02z.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMDF7N02Z/D Advance Information MMDF7N02Z Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual N-Channel with Monolithic Zener ESD Protected Gate DUAL TMOS POWER MOSFET EZFETs are an advanced series of power MOSFETs which 7.0 AMPERES utilize Motorola s High Cell Density TMOS process and contain 2... See More ⇒
mdf7n65bth.pdf
MDF7N65B N-Channel MOSFET 650V, 7.0A, 1.35 General Description Features These N-channel MOSFET are produced using advanced V = 650V DS MagnaChip s MOSFET Technology, which provides low on- I = 7.0A @ V = 10V D GS state resistance, high switching performance and excellent R 1.35 @ V = 10V DS(ON) GS quality. Applications These devices are suitable devic... See More ⇒
Detailed specifications: MDF4N65BTH, MDF5N50BTH, MDF5N50FBTH, MDF5N50FTH, MDF5N50ZTH, MDF6N60BTH, MDF6N60TH, MDF6N65BTH, K3569, MDF7N60BTH, MDF7N65BTH, MDF8N60BTH, MDF9N50BTH, MDF9N50FTH, MDF9N60BTH, MDFS10N60DTH, MDFS4N65DTH
Keywords - MDF7N50BTH MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: JMSH2010PC
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