MDF7N50BTH Datasheet and Replacement

MDP7N50B / MDF7N50B N-Channel MOSFET 500V, 7.0 A, 0.9General Description Features The MDP/F7N50B uses advanced Magnachips VDS = 500V MOSFET Technology, which provides low on-state ID = 7.0A @VGS = 10V resistance, high switching performance and RDS(ON) 0.9 @VGS = 10V excellent quality. MDP/F7N50B is suitable device for SMPS, high Applications Speed switching an

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF7N02Z/DAdvance InformationMMDF7N02ZMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Dual N-Channel withMonolithic Zener ESD Protected GateDUAL TMOSPOWER MOSFETEZFETs are an advanced series of power MOSFETs which7.0 AMPERESutilize Motorolas High Cell Density TMOS process and contain2

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF7N02Z/DAdvance InformationMMDF7N02ZMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Dual N-Channel withMonolithic Zener ESD Protected GateDUAL TMOSPOWER MOSFETEZFETs are an advanced series of power MOSFETs which7.0 AMPERESutilize Motorolas High Cell Density TMOS process and contain2

MDF7N65B N-Channel MOSFET 650V, 7.0A, 1.35 General Description Features These N-channel MOSFET are produced using advanced V = 650V DSMagnaChips MOSFET Technology, which provides low on- I = 7.0A @ V = 10V D GSstate resistance, high switching performance and excellent R 1.35 @ V = 10V DS(ON) GSquality. Applications These devices are suitable devic

MDP7N60B / MDF7N60B N-Channel MOSFET 600V, 7.0A, 1.15 General Description Features These N-channel MOSFET are produced using advanced V = 600V DSMagnaChips MOSFET Technology, which provides low on- V = 660V @ T DS jmaxstate resistance, high switching performance and excellent I = 7.0A @ V = 10V D GSquality. RDS(ON) 1.15 @ VGS = 10V Applications These devices