MDF7N50BTH - описание и поиск аналогов

MDP7N50B / MDF7N50B N-Channel MOSFET 500V, 7.0 A, 0.9 General Description Features The MDP/F7N50B uses advanced Magnachip s VDS = 500V MOSFET Technology, which provides low on-state ID = 7.0A @VGS = 10V resistance, high switching performance and RDS(ON) 0.9 @VGS = 10V excellent quality. MDP/F7N50B is suitable device for SMPS, high Applications Speed switching an

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMDF7N02Z/D Advance Information MMDF7N02Z Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual N-Channel with Monolithic Zener ESD Protected Gate DUAL TMOS POWER MOSFET EZFETs are an advanced series of power MOSFETs which 7.0 AMPERES utilize Motorola s High Cell Density TMOS process and contain 2

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMDF7N02Z/D Advance Information MMDF7N02Z Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual N-Channel with Monolithic Zener ESD Protected Gate DUAL TMOS POWER MOSFET EZFETs are an advanced series of power MOSFETs which 7.0 AMPERES utilize Motorola s High Cell Density TMOS process and contain 2

MDF7N65B N-Channel MOSFET 650V, 7.0A, 1.35 General Description Features These N-channel MOSFET are produced using advanced V = 650V DS MagnaChip s MOSFET Technology, which provides low on- I = 7.0A @ V = 10V D GS state resistance, high switching performance and excellent R 1.35 @ V = 10V DS(ON) GS quality. Applications These devices are suitable devic

MDP7N60B / MDF7N60B N-Channel MOSFET 600V, 7.0A, 1.15 General Description Features These N-channel MOSFET are produced using advanced V = 600V DS MagnaChip s MOSFET Technology, which provides low on- V = 660V @ T DS jmax state resistance, high switching performance and excellent I = 7.0A @ V = 10V D GS quality. RDS(ON) 1.15 @ VGS = 10V Applications These devices