MDP1932TH Todos los transistores

 

MDP1932TH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MDP1932TH
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 209 W
   Voltaje máximo drenador - fuente |Vds|: 80 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 120 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 105 nC
   Tiempo de subida (tr): 65 nS
   Conductancia de drenaje-sustrato (Cd): 1.55 pF
   Resistencia entre drenaje y fuente RDS(on): 0.0034 Ohm
   Paquete / Cubierta: TO-220

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MDP1932TH Datasheet (PDF)

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mdp1932th.pdf

MDP1932TH MDP1932TH

MDP1932 Single N-channel Trench MOSFET 80V, 120A, 3.4m General Description Features The MDP1932 uses advanced MagnaChips MOSFET V = 80V DSTechnology, which provides high performance in on-state I = 120A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON)quality. MDP1932 is suitable device for Synchronous

 8.1. Size:1058K  magnachip
mdp1933th.pdf

MDP1932TH MDP1932TH

MDP1933 Single N-channel Trench MOSFET 80V, 105A, 7.0m General Description Features The MDP1933 uses advanced MagnaChips MOSFET V = 80V DSTechnology, which provides high performance in on-state I = 105A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON)quality. MDP1933 is suitable device for Synchronous

 8.2. Size:1085K  magnachip
mdp1930th.pdf

MDP1932TH MDP1932TH

MDP1930 Single N-channel Trench MOSFET 80V, 120A, 2.5m General Description Features The MDP1930 uses advanced MagnaChips MOSFET V = 80V DSTechnology, which provides high performance in on-state I = 120A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON)quality. MDP1930 is suitable device for Synchronous

 8.3. Size:288K  inchange semiconductor
mdp1933th.pdf

MDP1932TH MDP1932TH

isc N-Channel MOSFET Transistor MDP1933THFEATURESDrain Current : I = 105A@ T =25D CDrain Source Voltage: V = 80V(Min)DSSStatic Drain-Source On-Resistance: R = 7m(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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