MDP1932TH PDF and Equivalents Search

 

MDP1932TH Specs and Replacement

Type Designator: MDP1932TH

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 209 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 65 nS

Cossⓘ - Output Capacitance: 1.55 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0034 Ohm

Package: TO-220

MDP1932TH substitution

- MOSFET ⓘ Cross-Reference Search

 

MDP1932TH datasheet

 ..1. Size:985K  magnachip
mdp1932th.pdf pdf_icon

MDP1932TH

MDP1932 Single N-channel Trench MOSFET 80V, 120A, 3.4m General Description Features The MDP1932 uses advanced MagnaChip s MOSFET V = 80V DS Technology, which provides high performance in on-state I = 120A @V = 10V D GS resistance, fast switching performance and excellent R DS(ON) quality. MDP1932 is suitable device for Synchronous ... See More ⇒

 8.1. Size:1058K  magnachip
mdp1933th.pdf pdf_icon

MDP1932TH

MDP1933 Single N-channel Trench MOSFET 80V, 105A, 7.0m General Description Features The MDP1933 uses advanced MagnaChip s MOSFET V = 80V DS Technology, which provides high performance in on-state I = 105A @V = 10V D GS resistance, fast switching performance and excellent R DS(ON) quality. MDP1933 is suitable device for Synchronous ... See More ⇒

 8.2. Size:1085K  magnachip
mdp1930th.pdf pdf_icon

MDP1932TH

MDP1930 Single N-channel Trench MOSFET 80V, 120A, 2.5m General Description Features The MDP1930 uses advanced MagnaChip s MOSFET V = 80V DS Technology, which provides high performance in on-state I = 120A @V = 10V D GS resistance, fast switching performance and excellent R DS(ON) quality. MDP1930 is suitable device for Synchronous ... See More ⇒

 8.3. Size:288K  inchange semiconductor
mdp1933th.pdf pdf_icon

MDP1932TH

isc N-Channel MOSFET Transistor MDP1933TH FEATURES Drain Current I = 105A@ T =25 D C Drain Source Voltage V = 80V(Min) DSS Static Drain-Source On-Resistance R = 7m (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒

Detailed specifications: MDP16N50GTH, MDP1723TH, MDP18N50BTH, MDP1901TH, MDP1921TH, MDP1922TH, MDP1923TH, MDP1930TH, IRF9640, MDP1933TH, MDP2N60TH, MDP2N60TP, MDP4N60TH, MDP4N60TP, MDP5N50BTH, MDP5N50FTH, MDP5N50ZTH

Keywords - MDP1932TH MOSFET specs

 MDP1932TH cross reference

 MDP1932TH equivalent finder

 MDP1932TH pdf lookup

 MDP1932TH substitution

 MDP1932TH replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

↑ Back to Top
.