MDP1932TH
MOSFET. Datasheet pdf. Equivalent
Type Designator: MDP1932TH
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 209
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 120
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 105
nC
trⓘ - Rise Time: 65
nS
Cossⓘ -
Output Capacitance: 1.55
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0034
Ohm
Package:
TO-220
MDP1932TH
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MDP1932TH
Datasheet (PDF)
..1. Size:985K magnachip
mdp1932th.pdf
MDP1932 Single N-channel Trench MOSFET 80V, 120A, 3.4m General Description Features The MDP1932 uses advanced MagnaChips MOSFET V = 80V DSTechnology, which provides high performance in on-state I = 120A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON)quality. MDP1932 is suitable device for Synchronous
8.1. Size:1058K magnachip
mdp1933th.pdf
MDP1933 Single N-channel Trench MOSFET 80V, 105A, 7.0m General Description Features The MDP1933 uses advanced MagnaChips MOSFET V = 80V DSTechnology, which provides high performance in on-state I = 105A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON)quality. MDP1933 is suitable device for Synchronous
8.2. Size:1085K magnachip
mdp1930th.pdf
MDP1930 Single N-channel Trench MOSFET 80V, 120A, 2.5m General Description Features The MDP1930 uses advanced MagnaChips MOSFET V = 80V DSTechnology, which provides high performance in on-state I = 120A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON)quality. MDP1930 is suitable device for Synchronous
8.3. Size:288K inchange semiconductor
mdp1933th.pdf
isc N-Channel MOSFET Transistor MDP1933THFEATURESDrain Current : I = 105A@ T =25D CDrain Source Voltage: V = 80V(Min)DSSStatic Drain-Source On-Resistance: R = 7m(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
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