MDS1652ERUH Todos los transistores

 

MDS1652ERUH MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MDS1652ERUH

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 16 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 4.2 nS

Cossⓘ - Capacitancia de salida: 420 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm

Encapsulados: SOIC-8

 Búsqueda de reemplazo de MDS1652ERUH MOSFET

- Selecciónⓘ de transistores por parámetros

 

MDS1652ERUH datasheet

 ..1. Size:1043K  magnachip
mds1652eruh.pdf pdf_icon

MDS1652ERUH

Preliminary Subject to change without notice MDS1652E Single N-channel Trench MOSFET 30V, 16A, 5.0m General Description Features The MDS1652E uses advanced MagnaChip s MOSFET VDS = 30V Technology, which provides high performance in on-state I = 16A @V = 10V D GS resistance, fast switching performance and excellent R DS(ON) (MAX) quality. Excelle

 8.1. Size:729K  magnachip
mds1654urh.pdf pdf_icon

MDS1652ERUH

MDS1654 Single N-Channel Trench MOSFET 30V, 15A, 9.5m General Description Features The MDS1654 uses advanced MagnaChip s MOSFET VDS = 30V Technology, which provides low on-state resistance, ID = 15A @VGS = 10V high switching performance and excellent reliability. RDS(ON)

 8.2. Size:678K  magnachip
mds1655urh.pdf pdf_icon

MDS1652ERUH

MDS1655 Single N-channel Trench MOSFET 30V, 11A, 17.5m General Description Features The MDS1655 uses advanced MagnaChip s MOSFET V = 30V DS Technology, which provides high performance in on-state ID = 11A @VGS = 10V resistance, fast switching performance and excellent R DS(ON) quality. MDS1655 is suitable device for DC-DC

 8.3. Size:641K  magnachip
mds1651urh.pdf pdf_icon

MDS1652ERUH

MDS1651 Single N-Channel Trench MOSFET 30V, 11.6A, 17m General Description Features The MDS1651 uses advanced MagnaChip s MOSFET VDS = 30V Technology, which provides low on-state resistance, ID = 11.6A@VGS = 10V high switching performance and excellent reliability. RDS(ON)

Otros transistores... MDQ23N50DTP , MDS1521URH , MDS1524URH , MDS1525URH , MDS1526URH , MDS1527URH , MDS1528URH , MDS1651URH , IRFP260N , MDS1653URH , MDS1654URH , MDS1655URH , MDS1656URH , MDS1754RH , MDS1903URH , MDS1951URH , MDS3603URH .

History: MDS1651URH

 

 

 


History: MDS1651URH

🌐 : EN  ES  РУ

social

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: AUB062N08BG | AUB060N08AG | AUB056N10 | AUB056N08BGL | AUB050N085 | AUB050N055 | AUB045N12 | AUB045N10BT | AUB039N10 | AUB034N10 | AUB033N08BG | AUB026N085 | AUA062N08BG | AUA060N08AG | AUA056N08BGL | AUA039N10

 

 

 

Popular searches

2sb618 | 2sc1328 | 2sc1845 transistor | a933 transistor datasheet | a1633 transistor | 2sa844 | 2sc1327 | 2sc3855

 

 

↑ Back to Top
.