All MOSFET. MDS1652ERUH Datasheet

 

MDS1652ERUH MOSFET. Datasheet pdf. Equivalent


   Type Designator: MDS1652ERUH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 16 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 4.2 nS
   Cossⓘ - Output Capacitance: 420 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
   Package: SOIC-8

 MDS1652ERUH Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MDS1652ERUH Datasheet (PDF)

 ..1. Size:1043K  magnachip
 mds1652eruh.pdf

MDS1652ERUH MDS1652ERUH

Preliminary Subject to change without notice ` MDS1652E Single N-channel Trench MOSFET 30V, 16A, 5.0m General Description Features The MDS1652E uses advanced MagnaChips MOSFET VDS = 30V Technology, which provides high performance in on-state I = 16A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON) (MAX)quality. Excelle

 8.1. Size:729K  magnachip
 mds1654urh.pdf

MDS1652ERUH MDS1652ERUH

MDS1654 Single N-Channel Trench MOSFET 30V, 15A, 9.5mGeneral Description Features The MDS1654 uses advanced MagnaChips MOSFET VDS = 30V Technology, which provides low on-state resistance, ID = 15A @VGS = 10V high switching performance and excellent reliability. RDS(ON)

 8.2. Size:678K  magnachip
 mds1655urh.pdf

MDS1652ERUH MDS1652ERUH

MDS1655 Single N-channel Trench MOSFET 30V, 11A, 17.5m General Description Features The MDS1655 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state ID = 11A @VGS = 10V resistance, fast switching performance and excellent R DS(ON) quality. MDS1655 is suitable device for DC-DC

 8.3. Size:641K  magnachip
 mds1651urh.pdf

MDS1652ERUH MDS1652ERUH

MDS1651 Single N-Channel Trench MOSFET 30V, 11.6A, 17mGeneral Description Features The MDS1651 uses advanced MagnaChips MOSFET VDS = 30V Technology, which provides low on-state resistance, ID = 11.6A@VGS = 10V high switching performance and excellent reliability. RDS(ON)

 8.4. Size:689K  magnachip
 mds1656urh.pdf

MDS1652ERUH MDS1652ERUH

MDS1656 Single N-Channel Trench MOSFET 30V, 7.2A, 28m General Description Features The MDS1656 uses advanced MagnaChips trench MOSFET VDS = 30V Technology to provide high performance in on-state resistance, I = 7.2A @V = 10V D GSswitching performance and reliability RDS(ON)

 8.5. Size:745K  magnachip
 mds1653urh.pdf

MDS1652ERUH MDS1652ERUH

MDS1653 Single N-Channel Trench MOSFET 30V, 12A, 12mGeneral Description Features The MDS1653 uses advanced MagnaChips MOSFET VDS = 30V Technology, which provides low on-state resistance, ID = 12A @VGS = 10V high switching performance and excellent reliability. RDS(ON)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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